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2022-09-24 17:06:16
AO3415 20V MOS tube field effect tube SOT-23 original spot AO3415 xjsic
Packaging Cut Tape (CT)
Part status does not apply to new designs
Category Discrete Semiconductor Products
Product Family Transistor - FET, MOSFET - Single
series-
Other name 785-1010-1
Specification
FET type P channel
Technology MOSFET (Metal Oxide)
Drain-source voltage (Vdss) 20V
Current at 25°C - Continuous Drain (Id) 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
On-resistance (max) 43 milliohms @ 4A, 4.5V at different Id, Vgs
Vgs(th) (max) 1V @ 250μA at different Ids
Gate charge (Qg) (max) 17.2nC @ 4.5V at different Vgs
Vgs (max) ±8V
Input Capacitance (Ciss) (max) 1450pF @ 10V at different Vds
FET function-
Power Dissipation (Max) 1.5W (Ta)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package SOT-23-3L
illustrate
AO3415 uses advanced trench technology to provide
Excellent RDS(ON), low gate charge and band gate operation
Voltage as low as 1.8V. The device is suitable for use as
load switch applications.