SI7922DN-T1-E3

  • 2022-09-24 17:06:16

SI7922DN-T1-E3

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Manufacturer: Vishay

Product Category:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: PowerPAK-1212-8

Transistor Polarity: N-Channel

Number of channels: 2 Channel

Vds-drain-source breakdown voltage: 100 V

Id-Continuous Drain Current: 2.5 A

Rds On-drain-source on-resistance: 195 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 2.5 V

Qg-gate charge: 8 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 150 C

Pd - Power Dissipation: 2.6 W

Channel Mode:Enhancement

Brand Name: TrenchFET

Package:Cut Tape

Package: MouseReel

Package:Reel

Configuration: Dual

Height: 1.04 mm

Length: 3.3 mm

Series:SI7

Transistor Type: 2 N-Channel

Width: 3.3 mm

Trademark: Vishay Semiconductors

Forward Transconductance - Min: 5.3 S

Fall Time: 11 ns

Product Type:MOSFET

Rise time: 11 ns

Factory Packing Quantity: 3000

Subcategory: MOSFETs

Typical turn-off delay time: 8 ns

Typical turn-on delay time: 7 ns

Part number alias: SI7922DN-T1