ManufacturerON Semiconductor

Data Sheet 2N7002L, 2V7002L

Standard package 3000

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Other names 2N7002LT1GOSTR

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 60V

Current at 25°C - Continuous Drain (Id) 115mA (Tc)

Driving voltage (Max Rds On, Min Rds On) 5V, 10V

On-resistance (max) 7.5 ohm @ 500mA, 10V at different Id, Vgs

Vgs(th) (max) 2.5V @ 250μA at different Id

Vgs (max) ±20V

Input Capacitance (Ciss) (Max) 50pF @ 25V at different Vds

FET function-

Power dissipation (max) 225mW (Ta)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Supplier Device Package SOT-23-3 (TO-236)

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