CSD17308Q3

  • 2022-09-24 14:42:51

CSD17308Q3

Manufacturer: Texas Instruments

Product Type:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: VSON-CLIP-8

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 30 V

Id - C continuous drain current: 50 A

Rds On - Drain-Source Resistance: 10.3 mOhms

Vgs - Gate-Source Voltage: - 8 V, + 8 V

Vgs th - gate-source threshold voltage: 900 mV

Qg - Gate Charge: 3.9 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 150 C

Pd - Power consumption: 28 W

Channel Mode:Enhancement

Company Name: NexFET

Package:Cut Tape

Package: MouseReel

Package:Reel

Configuration:Single

Height: 1 mm

Length: 3.3 mm

Series: CSD17308Q3

Transistor Type: 1 N-Channel Power MOSFET

Width: 3.3 mm

Brand: Texas Instruments

Development Kit: BQ500211AEVM-210

Fall Time: 2.3 ns

Product Type:MOSFET

Rise time: 5.7 ns

Original packaging quantity: 2500

Subcategory: MOSFETs

Standard off-delay time: 9.9 ns

Standard turn-on delay time: 4.5 ns

Weight per piece: 41 mg