Manufacturer: ON Semiconductor

Product Category:MOSFET

Technology: Si

Installation style: Through Hole

Package: TO-220-3

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-drain-source breakdown voltage: 100 V

Id-Continuous Drain Current: 96 A

Rds On-drain-source on-resistance: 7.35 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 4 V

Qg-gate charge: 31 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 175 C

Pd - Power Dissipation: 188 W

Channel Mode:Enhancement

Configuration: Single

Height: 16.3 mm

Length: 10.67 mm

Series: FDP085N10A

Transistor Type: 1 N-Channel

Width: 4.7 mm

Forward Transconductance - Min: 72 S

Fall Time: 8 ns

Product Type:MOSFET

Rise time: 22 ns

Packing Quantity: 800

Subcategory: MOSFETs

Part alias: FDP085N10A_F102

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