Material manufacturer Infineon Technologies

Data List IPD65R400CE

IPS65R400CE

Standard package 2500

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series CoolMOS?

Other namesIPD65R400CEAUMA1

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 650V

Current at 25°C - Continuous Drain (Id) 15.1A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

On-resistance (max) 400mΩ @ 3.2A, 10V at different Id, Vgs

Vgs(th) (max) 3.5V @ 320μA at different Ids

Gate charge (Qg) (max) 39nC @ 10V at different Vgs

Vgs (max) ±20V

Input Capacitance (Ciss) (max) 710pF @ 100V at different Vds

FET Functional Super Junction

Power Dissipation (Max) 118W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Device Package TO252-3 DPak (2 leads + tabs)

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