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2022-09-24 14:42:51
Samsung DDR3 memory chip K4B2G1646F-BYMA package FBGA96 new original imported Shenzhen spot
Shenzhen Fuanou Technology Co., Ltd.
0755-82795635 Mr. Zhu
QQ: 1005433625
K4B2G1646F-BYMA is a three-generation double data rate synchronous dynamic random access memory, a low-power, energy-efficient DRAM solution that reduces power consumption by up to 30% compared to DDR2. This in turn reduces the total cost of ownership.
Capacity 2 Gb Architecture 128M x 16
1866 Mbps operating voltage 1.35 V
Operating Temperature 0 ~ 85 °C Package 96FBGA