RN2706JE

Category Discrete Semiconductor Products

Transistor - Bipolar (BJT) - Array - Pre-biased

Manufacturer Toshiba Semiconductor and_Storage

series-

Packaging Tape and Reel (TR)

Active Part Status

Transistor Type 2 PNP - Pre-Biased (Dual) (Coupled Emitter)

Current - Collector (Ic) (Maximum) 100mA

Voltage - Collector Emitter Breakdown (Max) 50V

Resistor - Base (R1) 4.7 kΩ

Resistor - Emitter (R2) 47 kΩ

DC current gain (hFE) at different Ic, Vce (min) 80 @ 10mA, 5V

Vce saturation voltage drop at different Ib, Ic (maximum) 300mV @ 250μA, 5mA

Current - Collector Cutoff (Max) 100nA (ICBO)

Frequency - Transition 200MHz

Power - 100mW max

Mounting Type Surface Mount Type

Package/Enclosure SOT-553

Supplier Device Package ESV

Base Part Number TC74VHC21

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