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2022-09-24 14:42:51
Field effect tube IRF3205PBF IRF3205 55V 110A TO-220 N channel mos tube spot
Product Catalog MOS (Field Effect Transistor)
Drain-source voltage (Vdss) 55V
Continuous Drain Current (Id) (at 25°C) 110A
Gate-Source Threshold Voltage 4V @ 250uA
Drain-Source On Resistance 8mΩ @ 62A, 10V
Maximum power dissipation (Ta=25°C) 200W
Type N channel