SQJ459EP-T1_G...

  • 2022-09-24 14:42:51

SQJ459EP-T1_GE3

Manufacturer: Vishay

Product Type:MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Enclosure: PowerPAK-SO-8L-4

Transistor Polarity: P-Channel

Number of channels: 1 Channel

Vds - Drain-Source Breakdown Voltage: 60 V

Id - C continuous drain current: 52 A

Rds On - Drain-Source Resistance: 18 mOhms

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - gate-source threshold voltage: 1.5 V

Qg - Gate Charge: 73 nC

Minimum operating temperature:- 55 C

Maximum operating temperature: + 175 C

Pd - Power consumption: 83 W

Channel Mode:Enhancement

Qualification: AEC-Q101

Company Name: TrenchFET

Package:Cut Tape

Package: MouseReel

Package:Reel

Configuration:Single

Height: 1.04 mm

Length: 6.15 mm

Series: SQ

Transistor Type: 1 P-Channel

Width: 5.13 mm

Brand: Vishay Semiconductors

Mutual Conductance - Min: 40 S

Fall Time: 45 ns

Product Type:MOSFET

Rise time: 19 ns

Original packaging quantity: 3000

Subcategory: MOSFETs

Standard off-delay time: 88 ns

Standard turn-on delay time: 12 ns

Weight per piece: 506.600 mg