Material manufacturer STMicroelectronics/ST

Data List STD5NM60

STB8NM60

STP8NM60

Standard Package 75

Packaging Pipe Fittings

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

SeriesMDmesh?

Other names STD5NM60-1

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 600V

Current at 25°C - Continuous Drain (Id) 5A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

On-resistance (max) 1 ohm @ 2.5A, 10V at different Id, Vgs

Vgs(th) (max) 5V @ 250μA at different Ids

Gate charge (Qg) (max) 18nC @ 10V at different Vgs

Vgs (max) ±30V

Input Capacitance (Ciss) (Max) 400pF @ 25V at different Vds

FET function-

Power Dissipation (Max) 96W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Package/Case TO-251-3 Short Lead, IPak, TO-251AA

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