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2022-09-24 14:15:06
Supply VBsemi brand VBE1695 original spot contact QQ1640951075
property parameter value
Product Catalog MOS (Field Effect Transistor)
Drain-source voltage (Vdss) 60V
Continuous Drain Current (Id) (at 25°C) 16.9A
Gate-Source Threshold Voltage 3V @ 250uA
Drain-Source On Resistance 83mΩ @ 6A, 4.5V
Maximum power dissipation (Ta=25°C) 41.7W
Type N channel