Manufacturer VISHAY

Data ListSIHG64N65E

Standard pack of 500

Packaging Pipe Fittings

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 650V

Current at 25°C - Continuous Drain (Id) 64A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

Vgs(th) (max) 4V @ 250μA at different Ids

Gate charge (Qg) (max) 369nC @ 10V at different Vgs

Vgs (max) ±30V

Input Capacitance (Ciss) (Max) 7497pF @ 100V at Vds

FET function-

Power Dissipation (Max) 520W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Through Hole

Package/Case TO-247-3

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