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2022-09-24 14:15:06
Supply INFINEON brand IRF3808PBF original spot contact QQ1640951075
product attribute attribute value
Manufacturer: Infineon
Product Category:MOSFET
Technology: Si
Installation style: Through Hole
Package/Case:TO-220-3
Transistor Polarity: N-Channel
Number of channels: 1 Channel
Vds-drain-source breakdown voltage: 75 V
Id-Continuous Drain Current: 140 A
Rds On-Drain Source On Resistance: 7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2 V
Qg-gate charge: 150 nC
Minimum operating temperature:- 55 C
Maximum operating temperature: + 175 C
Pd - Power Dissipation: 330 W
Channel Mode:Enhancement
Package:Tube
Configuration:Single
Height: 15.65 mm
Length: 10mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Trademark: Infineon / IR
Product Type:MOSFET
Factory Packing Quantity: 1000
Subcategory: MOSFETs
Unit weight: 6 g