Manufacturer STMicroelectronics / STMicroelectronics

Data List STx18N65M5

Standard package 2500

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

SeriesMDmesh? V

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 650V

Current at 25°C - Continuous Drain (Id) 15A (Tc)

Driving voltage (Max Rds On, Min Rds On) 10V

On-resistance (max) 220 milliohms @ 7.5A, 10V at different Id, Vgs

Vgs(th) (max) 5V @ 250μA at different Ids

Gate charge (Qg) (max) 31nC @ 10V at different Vgs

Vgs (max) ±25V

Input Capacitance (Ciss) (Max) 1240pF @ 100V at different Vds

FET function-

Power Dissipation (Max) 110W (Tc)

Operating temperature 150°C (TJ)

Mounting Type Surface Mount Type

Package/Case TO-252-3, DPak (2 leads + tab), SC-63

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