L4931CD33-TRY, the new original spot 0755-82732291 will be shipped on the same day or picked up at the store. The photos are real shots of our products. Due to the large number of products, we have not described the parameters of each product. If you want to know more product information and prices Welcome to consult and purchase, please contact our staff Tel: 0755---82732291/0755---85274662, QQ: 1174 052353 / 1157611585 QQ: 1755232575 /QQ: 1157611585 Tel: 0755-82732291/0755-85274662.

WeChat ID: SET87680558 or WeChat ID: 87680558

You are welcome to contact us through QQ: 1755232575 /QQ: 1157611585 or telephone 0755-82732291 / 0755-85274662.

Provide fast sample and complete machine matching service (80 models within the same day, order before 17:00 on the same day, delivery on the same day, received the next day.)

MMBR941

HT7130

1SS362

24C04

HT7050

LBC847BPDW1T1G

2SD1819

KTC3881

BF904

BFG67

NTR4502

1SS353

TC7S14F

TC7S14FU

BFG541

BSN20

S8050

2SD1766-R

2SD1766

BFG410W

BFG17A

1N4148WT

1N4148WS

2SK2103

KTA1662

KTA1661

PESD5V0S1BL

PESD5V0L1BA

PESD5V0S1BB

PESD5V0S2BT

79L08

KRC105S

MGF4934AM-01

S8550

S8550 2TY

1SS187

1SS355

MMFT2N02

1SS388

BC817-40

BC817-25

TC7S04F (TE85L, F)

TC7S04FU

UPA806T

BCW70

1SS357

RB751S-40

FDV304P

MBRS320

1SV271

1SV217

S3J

HT7044-1

BFG135

PHB108NQ03LT

2SB766

HT7144-1

SCD34

RB551V-40

RB551V-30

2SD1000-LL

U1D

ESD5Z6.0T1G

RB411D

KRA102S

KTA1505S-Y

KTA1505S-G

KTA1504S-Y/G

MMBR0540

BAS85

HT7325-1

HSMP3892

HSMP389C

HSMP3814-TR1G

2SC4672

BFS17AR

1SV128

74LVC1G04GW

74LVC1G04GV

74LVC1G08GW

74LVC1G08GV

74LVC1G125GW

ME331B

BFS17

2SK2685

2SD1614

BCR162

PRF957

2SK3018

2SC2757

HT48R05

HT48R064

MX30LF1G08AA-TI

49SMLB24.0000-16GHE-E

MX29LV040CT2I-70G

MX29LV800CTTI-70G

MX29LV400CBTI-70G

MX29LV400EBTI-70G

MX29LV400CBWGI-70

MX29LV320DBTI-70G

MX29LV160DBTC-70G

2SB1424

2SB1197K

NDS356

CR05AS-8

MBR0530

XC62FP3302PR

XC62FP3302MR

XC62FP3002PR

AZ23C5V6

MMBTA94

HSM2838TCR

MBRA140

RD3.6S

2SC4180

FDN360P

NDS355AN

MMBT4403

BFR182W

MGA83563

2SD1802

BF998R

XC62FP1502PR

XC62FP2002PR

XC62FP2202PR

XC62FP3002MR

2SC4094

2SC4097

KTC4075-Y

BFQ591

BA892-02V H6127

ON4832

BAR61

MBR0540LT1G

CEM4953A

STZ5.6N

79L12

2SC5010

2SC5065

BAS21LT1G

1SMA10CAT3G

RB161VA-20

KTC4373

KTC4374

KTC4375-Y

BF2040E6814

BFG196

2SK1824

BC846B

M74HC4017RM13TR

HT7033

BAV202

PZTA92

MX29LV160DBTI-70G

MX29LV160DTTI-70G

MX29LV128DBT2I-90Q

MX29LV160DBXEI-70G

MX29LV160DTXEI-70G

MX29LV128DTT2I-90Q

MX29LV800CBXBI-90G

MX29LV040CQI-70G

MX29LV640ETTI-70G

MX29LV800CBTI-70G

MX29LV160DBXBI-70G

MX29LV800CBXBI-70G

IS61C256AH-15J

IS61C256AH-12J

IS61C256AH-25UI

IS61C256AH-12TL

IS61C256AL-12TLI

IS61C256AL-12JLI

BA10324AF-E2

MX29G256FLTI-90Q

74HC245D

K4B2G1646F-BCMA

SRX7302

F25L016A-50PAG

MX25L6433FM2I-08G

MX25L512EMI-10G

MX25L512CMI-12G

MX25L8005MI-15G

MX25L3206EPI-12G

MX25L6406EMI-10G

MX25L6445EMI-10G

MX25L3208EM2I-12G

MX25L3255EXCI-10G

MX25L8006EM1I-12G

MX25L8006EM2I-12G

IS62WV5128BLL-55TLI

IS62WV2568BLL-55TLI

IS62WV25616BLL-55TLI

IS62WV51216BLL-55TLI

RT9167A-33CB

BAS70-05W

BAS70-05

LM324DR

PESD2CAN

BC857B

BZX84C-5V1

BF840

2SC2758

BLT50

BAT17-04 E6327

IS62WV12816BLL-55TLI

IS62WV1288DBLL-45HLI

IS62WV5128BLL-55T2LI

A3V56S40GTP-60

MX25L512EMC-20G

MX25L512EOC-20G

MX25L5121EMC-20G

DM9008AEP

IS61WV102416BLL-10MLI

A3R12E40DBF-AH

A3R12E40CBF-AH

A3R12E40CBF-8E

IS61WV51232BLL-10BLI

IS61WV25616BLL-10BLI

W25Q80DVSSIG

MX25U100EZUI-14G

MX25U1635EZNI-10G

IS42S32400B-7TL

IS42S32200E-6TL

IS42S32800D-7BL

IS42S32800D-7TLI

IS42S32400B-7TLI

IS42S32160C-75BLI

MX25L4006EM1I-12G

MX25L4006EZNI-12G

LSG04N65A

LSG04N70A

ST-F2023

MX66L1G45GXDI-10G

IS42S16800B-7T

IS42S16800D-7TL

IS42S16160G-6TL

IS42S16800A-7TL

IS42S16320B-7TLI

IS42S16400F-7TLI

IS42S16800E-7BLI

IS42S16160C-7TLI

IS42S16160B-7TLI.

IS42S16800B-75ETLI

IS42S16160D-75ETLI

IS61WV51216BLL-10MLI

KH25L6406EM2I-12G

PI74SSTUA32864NBE

W25Q128FVSIG

IC61LV6416-12T.

DM9000EP

DM9000AEP

DM9000CEP

DM9000CIEP

RT9362APQV

EH17A

IS61LV6416-8TL

IS61LV6416-12T

IS61LV6416-10TL

IS61LV51216-8TL

IS61LV12816L-8TL

IS61LV256AL-10TLI

IS61LV2568L-10KLI

IS61LV12816L-10TL

IS61LV25616AL-10TL

IS61LV5128AL-10TLI

IS61LV25616AL-10TLI

RT9193-30PB

RT9193-28PB

KH29LV320DBTC-70G

IS63LV1024L-10TL

RT9167A-30PB

MX25V4005CMI-20G

KH25U4033EOI-12G

KH25L1636DM2C-12G

KH25L4006EM1C-12G

KH25U4033EZUI-12G

KH25L1606EM2C-12G

KH25L1606EM2I-12G

LTC3642EMS8E#PBF

LTC3642IMS8E#PBF

LTC3642IMS8E-3.3#PBF

LTC3642EMS8E-3.3#PBF

LT6604IUFF-10#PBF

XC3S700AN-4FGG484I

LT3640IUFD#PBF

LT6016HMS8#PBF

LM399AH#PBF

ADXL357BEZ

LT3406ABES5#TRPBF

LT1009IS8#PBF

LT1004IS8-2.5#PBF

LT3476EUHF#PBF

LT3466EDD#PBF

LT8391EFE#PBF

LT3081IDF#TRPBF

LT3081IFE#TRPBF

LT3081EFE#TRPBF

LT8631IFE#PBF

LTC2353ILX-16#PBF

LTC2358ILX-18#PBF

LTC2355IMSE-12#PBF

LTC2355CMSE-12#PBF

LTC2355CMSE-14#PBF

LTC2351IUH-14#PBF

LTC2856IMS8-1#PBF

5CEFA7F23I7N

ADV7180BCP32Z-RL

1734354-1

LT3086IR#PBF

LT3086IT7#PBF

LTC2348ILX-18#PBF

LTC2151CUJ-14#PBF

LTC2151CUJ-12#PBF

LTC2151IUJ-12#PBF

LTC2151IUJ-14#PBF

LTC2156IUP-14#PBF

LTC2156CUP-14#PBF

LTC2157IUP-14#PBF

LTC2155CUP-14#PBF

LTC2152IUJ-14#PBF

LTC2152CUJ-14#PBF

LTC2157CUP-14#PBF

LTC2158IUP-12#PBF

LTC2155IUP-14#PBF

LT3600IMSE#PBF

LTC2163CUK#PBF

LTC2163IUK#PBF

LT1959CR#PBF

LT3798IMSE#PBF

LT3798EMSE#PBF

MAX44284HAUT+T

LTC6700CS6-3#PBF

LT1085CT#PBF

LT6001CMS#PBF

LT6002CGN#PBF

LT6003CS5#TRPBF

LT4276AIUFD#PBF

ARA200A12

LTC3868IGN-1#PBF

LTC3865IFE#TRPBF

LTC3865EFE#TRPBF

LTC3868EGN-1#PBF

LTC3868IUFD-1#PBF

LTC3868EUFD-1#PBF

LTC4263CS#PBF

LTC4267IGN#PBF

LTC4266IGW#PBF

LTC4266CGW#PBF

LTC4260IGN#PBF

LTC4263IDE#PBF

LTC4266IUHF#PBF

LTC4269IDKD-1#PBF

2SC4617

IRLR024N

IRLM110A

IRLML2803

IRLML2402TRPBF

AMS1117-1.2V

AMS1117-1.5V

BAV23S

78L08

2SB1427

2SB1115

BAP51-02

BAS516

HSU119

BF599

BAR43A

BSP61

HM882

RB731U

HT7550-1

MMDT3904

RB491D

BCP56

BCP69-25

PLVA656A

RB715F

BCP52

3SK255

BAS216

HSMS2802

HSMS2812

HSMS2822

HSMS2820

HSMS286C

HSMS2850

HSMS282C

HSMS281C

HSMS2804

PMEG1020EA

BFG505

BAT42W

PUMT1N

BSS84LT1G

SI9183DT-30-T1-E3

KTC3879

BAT17-06W

BAV70

BF772

HT7536-1

BC848B

BFP540

BFP182W

BFP193W

BFP405 H6327

BC868

HT7021-1

78M06

78M08

MMBTA06

RN2402

SDV708D-D

2SK1588

2SC3295

2SC3295-B

2SC3295-A

S9013

BAS40-06

BAS40-05

2SC2884

2SC2881-Y

2SC2873-Y

2SC2884-Y

BCR133

MMSD4148

2SC3585-T1B/R44

RTQ035P02

1SV232

2SC5066

2SC5065-O/Y

1T362(1W362)

MURS140

NTR4101NT1G

1SS301

BAP50-03

PBR951

LTC2203IUK#PBF

LTC2204IUK#PBF

LTC2206IUK-14#PBF

LTC2205IUK-14

LTC2206IUK#PBF

LTC2207IUK#PBF

LTC2207CUK#PBF

LTC2208IUP-14#PBF

LT3697IMSE#PBF

LTM8001IY#PBF

ISL5314INZ

LTC3533EDE#PBF

LTC3532EMS#PBF

LTC3531ES6-3.3#TRPBF

LTC3530EMS#PBF

MBR320

2SC5081

2SC5085

MMDT3904-7-F

SK24

KTC3875

KTC3876S-Y/G

HT7024-1

IRFL4310

DTA124EK

DTA124EU

DAN222G

HT7330

PESD3V3L1BA

PESD3V3L2BT

BCX71

BCX54

BCX17

BCX56

BCX53

BCX51

BCX54-16

BCX51-16

1SS356

imx2

BC856B

2SC3326-B

MMBZ5V6ALT1G

HVU359

MMBTH81

1SS272

UPA808TB

BAR81W

2SC5145

AO3409

AO3401

AO3411

2N2222

PESD24VL1BA

DTA114YE

DTA114EK

DTA114EU

DTA114EUK

1W362

PBR941

BCW30

FMMT718

PESD12VL2BT

79L06

UPC8106T

UPC8109TB

BA895

NNCD5.6F-T1B

1SV229

SS8050 Y1

MMBD1503A

MMBZ9V1

AIC1642-33PXTR

SXM06

BAP64-04

BAP64-03

BAP64-05

BAP64-03W

BAP50-04W

BAP64-05W

BAP63-02

BAP1321-04

HM772

HVU350

2SB1115A

HT7136-1

2SC5508-T2B

RLS4148

2SD882

2SK1069-4-TL-E

2SD1615

2SD1006

2SD1999

2SC4081

LT4363CMS-2#TRPBF

LT3480EMSE#PBF

LT1227MJ8

LTC1403IMSE#PBF

LTC1407AIMSE#PBF

LTC1407ACMSE#PBF

LTC1408CUH-12#PBF

LTC1407ACMSE-1#PBF

LTC1407AIMSE-1#PBF

LTC3612IUDC#PBF

LTC3613IWKH#PBF

BFCN-1525+

BFCN-1445+

LTC6820HMS#PBF

LTC6820IMS#PBF

LTC2642IMS-16#PBF

LTC2642AIMS-16#PBF

LTC2642ACMS-16#PBF

HMC1018LP4E

LTC2209CUP#PBF

LTC2203CUK#PBF

LTC2201IUK#PBF

LTC2209IUP#PBF

LTC3728EG

LTC3807EFE

LTC3807IFE#PBF

LTC3803ES6#TRPBF

APS1053

LT3736EUF#PBF

EK-Z7-ZC706-G

LT1763CS8-3.3#TRPBF

LT1763CS8-5#PBF

LT1763CS8-2.5#PBF

THS4031IDGN

LTC3109IGN#PBF

LTC3104IDE#PBF

LTC3103IDD#PBF

LTC3105EMS#PBF

LTC3109EGN#PBF

LTC3105IMS#PBF

LTC3104IMSE#PBF

LTC3104EMSE#PBF

LTC3108EDE-1#PBF

LTC3108IGN-1#TRPBF

LTC3108EDE#PBF

LTC3108IGN#TRPBF

LTC6995HDCB-2#PBF

LTC6360IMS8E#PBF

LTC6360CMS8E#PBF

LTC2902-1IGN#TRPBF

LT3758EMSE#PBF

LTC3350EUHF#PBF

LT8610IMSE#PBF

LT8610EMSE#PBF

LT8610AXMSE#PBF

LT8610ABIMSE#PBF

LT8610ABEMSE#PBF

LT8610ABEMSE-3.3#PBF

LTC2173IUKG-14#PBF

LTC2174IUKG-14#PBF

LTC2175IUKG-14#PBF

LTC2174IUKG-12#PBF

LTC2173IUKG-12#PBF

LT1495IS8#PBF

LT3070MPUFD#PBF

LT3080IT#PBF

LT3080ET#PBF

LT3080EMS8E#TRPBF

LT3080IMS8E#TRPBF

LTC2368IMS-24#PBF

LTC2369IMS-18#PBF

LTC2364IMS-18#PBF

LTC2364IDE-18#PBF

LTC2364CMS-18#PBF

LTC2364IMS-16#PBF

LTC2368IMS-16#PBF

LTC2803CDHC#PBF

LTC3785EUF#PBF

LTC3787EGN#PBF

LTC3787IGN#PBF

LTC3786EMSE#PBF

LTC3786IMSE#PBF

LTC3789IGN#TRPBF

LTC3787IUFD#TRPBF

LTC3786EMSE#TRPBF

LTC3787EUFD#TRPBF

LTC3789EGN#TRPBF

LT3694IFE#PBF

LT3652EMSE#PBF

LT3663EMS8E#PBF

LT3663IMS8E#PBF

LT3680IMSE#TRPBF

LT3653IMSE#TRPBF

LT3652HVEMSE#PBF

LT3651EUHE-8.2#PBF

LT3663IMS8E-3.3#PBF

LT3650EMSE-8.4#TRPBF

LT3680EMSE#TRPBF

LT3650EMSE-4.2#PBF

LT1766IGN#PBF

LT3517EUF#PBF

LT3517IFE#PBF

LTC7138IMSE#PBF

LTC7138EMSE#PBF

LTC2954ITS8-1#PBF

LTC2954CTS8-2#TRPBF

LTC2951CTS8-1#TRPBF

LTC2951ITS8-1#TRPBF

AD8361ARMZ

LTC2255IUH#PBF

LTC2259IUJ-14#PBF

LTC2258IUJ-12#PBF

SYBD-20-272HP+

LTC3769EFE#PBF

LTC3765EMSE#PBF

LTC3765IMSE#PBF

MRF858

LT1807CS8#PBF

LTC2500IDKD-32#PBF

LTC2508CDKD-32#PBF

LTC2508IDKD-32#PBF

YSF-322+

LT3015EMSE#TRPBF

LT3015EQ#PBF

LT3015ET-15#PBF

LT3015ET-12#PBF

LT3015IMSE#TRPBF

LT3015EMSE-3#PBF

LT3015IMSE-3#PBF

XCF128XFTG64C

LT8612EUDE#PBF

LT8612IUDE#PBF

LT8611IUDD#PBF

LT8611EUDD#PBF

LTC2194CUKG

LTC2195IUKG#PBF

LTC2389ILX-18#PBF

LTC2380IDE-24#PBF

LTC2380CDE-24#PBF

LTC2380IMS-16#PBF

LTC2380IMS-24#PBF

LTC2381IMS-16#PBF

LTC2380CMS-18#TRPBF

LTC2380IDE-18#TRPBF

LTC2380IMS-18#TRPBF

LTC2380CDE-18#TRPBF

LTC2380CMS-16#TRPBF

LTC2381CMS-16#PBF

LTC2385CUH-18#PBF

LTC2385IUH-18#PBF

LTC1485CS8#PBF

LTC1485IS8#TRPBF

LTC3025EDC#PBF

LTC2268IUJ-12#PBF

LTC2263IUJ-12#PBF

LTC2260IUJ-14#PBF

LTC2263IUJ-14#PBF

LTC2261IUJ-14#PBF

LTC2266IUJ-14#PBF

LTC2266IUJ-12#PBF

LTC6655BHMS8-5#PBF

LTC6655BHMS8-2.048#PBF

SN65HVD74DGKR

LT1498CS8#PBF

EPCS16SI8N

LTC5549IUDB#PBF

LT5517EUF#PBF

LTC3454EDD#PBF

LTC3456IUF#TRPBF

MT41J256M16HA-093:E

LT6700HVCS6-3#TRPBF

LTC3736EUF#PBF

LTC2241CUP-10#PBF

LTC4364IDE-2#TRPBF

LTC2637CDE-LZ10#PBF

LTC2634CMSE-LZ8#PBF

LTC2634CMSE-LZ12#PBF

LTC2634IMSE-LMX8#PBF

LTC2634IMSE-HMX12#PBF

LTC2634CMSE-HMX12#PBF

LT3475EFE#PBF

LT3475IFE#PBF

LTC3113IDHD#PBF

LTC3112IDHD#PBF

LTC3113EDHD#PBF

LT8582IDKD#PBF

LT8582EDKD#PBF

LTC1569IS8-6#PBF

LT6202IS8#PBF

LT1801IMS8#PBF

LTC3260EMSE#PBF

LTC3261IMSE#PBF

LTC3261MPMSE#PBF

LTM4616IV#PBF

LTM4619EV#PBF

LTM4618EV#PBF

LTM4619IV#PBF

LTM4616EV#PBF

LTM4615IV#PBF

LTM4614IV#PBF

LTM4613IY#PBF

LTM4613EV#PBF

LTM4618IV#PBF

LTM4616IY#PBF

LTM4618EY#PBF

LTM4613IV#PBF

LTM4616MPV#PBF

LTM4616MPY#PBF

LTM4612IV#PBF

LTM4614EV#PBF

LTM4613MPV#PBF

74ABT04D, 118

LTM2884IY#PBF

LTM2882IY-3#PBF

LTM2881IV-3#PBF

LTM2881HY-5#PBF

LTM2883IY-3S#PBF

LTM2882IV-3#PBF

LTM2882EY-3#PBF

LTC2945CUD-1#PBF

LTC3891IFE#PBF

LTC3895IFE#PBF

LTC3891EFE#PBF

LTC3895EFE#PBF

LTC3890IUH#TRPBF

LTC3890EUH#TRPBF

LTC3890IGN-3#PBF

LTC3890EGN-3#TRPBF

LTC3375EUK#PBF

LTC3375IUK#PBF

LTC2442IG#PBF

LTC2246IUH#PBF

LTC4015EUHF#PBF

LTC2377IMS-20#PBF

LTC2378IMS-20#PBF

LTC2325IUKG-16#PBF

LTC5800IWR-IPMA#PBF

LT1117IST#PBF

LT1117IST-3.3#PBF

LT1962EMS8-3.3

LT1962EMS8-3#PBF

LT1962EMS8#TRPBF

LT1962EMS8-5#TRPBF

LTC2180IUP#PBF

LTC2183IUP#PBF

LTC2188CUP#PBF

LTC2188IUP#PBF

EK-K7-KC705-G

LTC1604ACG#PBF

LTC1604AIG#PBF

LTC2983ILX#PBF

LTC2983CLX#PBF

LM5134ASD/NOPB

LT3748IMS#TRPBF

LTC1643ALIGN#PBF

LTC1643AL-1IGN#PBF

LT3085IMS8E#PBF

LT4351IMS#PBF

LTM8022EV#PBF

LTM8026IY#PBF

LTM8026IV#PBF

LTM8026EY#PBF

LTM8022IV#PBF

LTM8024EV#PBF

LTM8027IV#PBF

LTM8025IV#PBF

LTM8027EV#PBF

LTM8023EV#PBF

LTM8023IV#PBF

LTM8021IV#PBF

LTC2756ACG#PBF

LTC2756BIG#PBF

LTC2756AIG#PBF

LTC2756BCG#PBF

LTC2757AILX#PBF

LTC2758AILX#PBF

LTC2755CUP-16#PBF

LTC2755IUP-16#PBF

LTC2754AIUKG-16#PBF

LTC2754ACUKG-16#PBF

LTC2755IUP-14#PBF

YAT-7+

LM5020MM-2

LT5521EUF#PBF

LT5560EDD#PBF

LT5578IUH#PBF

LT5557EUF#PBF

LT5522EUF#PBF

LT5537EDDB#PBF

LT5534ESC6#TRPBF

LT5400AHMS8E-2#PBF

LT5400AIMS8E-5#PBF

LT5514IFE#PBF

LT5514EFE#PBF

LTM4630IV#PBF

LTM4634IY#PBF

LTM4632IY#PBF

LTM4633EY#PBF

LTM4636IY#PBF

LTM4630EV#PBF

LTM4633IY#PBF

LTM4630AIY#PBF

The panel situation is grim: one hand lacks IC, the other lacks glass

According to the Economic Daily News, on December 16, Peng Shuanglang, chairman of the panel maker AUO, said at the Taipei Computer Association membership meeting that while the panel market is in good shape, there were successive earthquakes and power outages at the glass substrate factory in Taiwan and Japan last week. , With the tight supply of key components, the panel industry is now in a situation of "lack of IC in one hand and lack of glass in the other", making the overall panel supply tighter than originally expected.

He emphasized that the prosperity of the information and communication technology industry, including panels, will continue until the first half of next year. For example, there is still a large gap in notebook computers, and the satisfaction rate of Chromebooks, which mainly focus on the education market, is only about 50%.

He emphasized that in the medium and long term, mainland LCD panel factories have no plans to open new production capacity. It is expected that the structural improvement will gradually ferment in the next two to three years, and supply and demand will remain healthy and return to market trends.

However, the supply of several major components has been very tight recently, and now it is faced with the difficulty of "lack of IC in one hand and lack of glass in the other", and the supply matching of the two is another problem.

In addition, last week, an earthquake of 6.7 on the Richter scale occurred in Taiwan, which affected both panel and semiconductor production lines. He said that the AUO production line was suspended and cleaned up for a few hours after the earthquake, but it quickly returned to normal, and the loss was not significant.

However, Nippon Electric Glass (NEG), a major Japanese glass substrate maker, also lost power last week, causing damage to its glass furnaces. Peng Shuanglang believes that the recovery time may take three or four months. The factory accounts for about 10% of the global glass production capacity, which will have a crowding effect. AUO will not have much impact, but South Korea's LGD will be greatly affected.

In terms of panel prices, the market estimates that, affected by the NEG power outage in Japan, the increase in panel prices will expand in December. Peng Shuanglang emphasized that prices are always determined by supply and demand, and the severe situation will continue into the first half of next year.

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Commonly used power semiconductor devices

Power electronic device (Power Electronic Device), also known as power semiconductor device, is used for high-power (usually tens to thousands of amps of current and hundreds of volts or more) electronic devices in power conversion and power control circuits. It can be divided into half-controlled devices, fully-controlled devices and uncontrollable devices, among which thyristors are half-controlled devices, with the highest withstand voltage and current capacity among all devices; power diodes are uncontrollable devices, with simple structure and principle, work Reliable; it can also be divided into voltage-driven devices and current-driven devices, among which GTO and GTR are current-driven devices, and IGBT and power MOSFET are voltage-driven devices.

1. MCT (MOS Control led Thyristor): MOS control thyristor

Equivalent circuit diagram of MCT

MCT is a new type of MOS and bipolar device. As shown in FIG. MCT is a high-impedance, low-drive pattern MCT's power and fast switching speed characteristics combined with thyristor's high-voltage, high-current characteristics to form a high-power, high-voltage, fast full-control device. Essentially the MCT is a MOS gate controlled thyristor. It can be turned on or off by adding a narrow pulse to the gate, which is formed by paralleling countless unit cells. Compared with GTR, MOSFET, IGBT, GTO and other devices, it has the following advantages:

(1) High voltage and large current capacity, the blocking voltage has reached 3 000V, the peak current has reached 1 000 A, and the maximum current density that can be turned off is 6 000kA/m2;

(2) The on-state voltage drop is small and the loss is small, and the on-state voltage drop is about 11V;

(3) Extremely high dv/dt and di/dt tolerance, dv/dt has reached 20 kV/s, and di/dt is 2 kA/s;

(4) The switching speed is fast, the switching loss is small, the turn-on time is about 200ns, and the 1 000 V device can be turned off within 2 s;

2. IGCT (Integrated Gate Commutated Thyristors)

IGCT is a new type of device developed on the basis of thyristor technology and combined with IGBT and GTO technologies. It is suitable for high-voltage and large-capacity frequency conversion systems. It is a new type of power semiconductor device used in giant power electronic complete sets.

IGCT integrates GTO chip with anti-parallel diode and gate driver circuit, and then connects with its gate driver in a low-inductance manner at the periphery, which combines the advantages of stable turn-off capability of transistor and low on-state loss of thyristor. The performance of a thyristor is exerted in the on-phase, and the characteristics of a transistor are exhibited in the off-phase. The IGCT chip is not connected in series or in parallel, the power of the two-level inverter is 0.5~3 MW, and the power of the three-level inverter is 1~6 MW; if the reverse diode is separated, it is not integrated with the IGCT, and the two-level inverter The inverter power can be expanded to 4/5 MW, and the three-level can be expanded to 9 MW.

At present, IGCT has been commercialized, the highest performance parameter of IGCT products manufactured by ABB is 4[1] 5kV/4kA, and the highest development level is 6kV/4kA. In 1998, Japan's Mitsubishi Corporation also developed a GCT thyristor with a diameter of 88 mm. The advantages of low loss, fast switching, etc. ensure that it can be used in 300 kW~10 MW converters reliably and efficiently, without the need for series and in parallel.

3. IEGT (Injection Enhanced Gate Transistor) electron injection enhanced gate transistor

The IEGT is an IGBT series power electronic device with a withstand voltage of more than 4 kV. The low on-state voltage is realized by adopting the structure of enhanced injection, which has made a leap in the development of large-capacity power electronic devices. IEGT has a potential development prospect as a MOS series power electronic device. It has the characteristics of low loss, high-speed operation, high withstand voltage, intelligent active gate drive, etc., as well as the characteristics of using trench structure and multi-chip paralleling and self-current sharing. It has the potential to further expand the current capacity. In addition, many derivative products can also be provided through module packaging, which are highly expected in the application of large and medium-capacity converters. The IECT developed by Japan's Toshiba takes advantage of the electron injection enhancement effect, so that it has the advantages of both IGBT and GTO: low saturation voltage drop, safe operating area (the capacity of the absorption circuit is only about one tenth of that of GTO), low gate Drive power (two orders of magnitude lower than GT O) and higher operating frequency. The device adopts a flat-plate crimping motor lead-out structure, with high reliability, and its performance has reached the level of 4.5 kV/1 500A.

4. IPEM (Integrated Power Elactronics Modules): Integrated Power Electronic Modules

IPEM is a module that integrates many components of a power electronic device. It first encapsulates semiconductor devices MOSFET, IGBT or MCT and diode chips together to form a building block unit, and then stacks these building block units on an open-hole high-conductivity insulating ceramic substrate. Copper substrate, beryllium oxide ceramic and heat sink. On the upper part of the building block, the control circuit, gate drive, current and temperature sensors, and protection circuit are integrated on a thin insulating layer by surface mounting. IPEM realizes the intelligence and modularization of power electronic technology, greatly reduces circuit wiring inductance, system noise and parasitic oscillation, and improves system efficiency and reliability

5. PEBB (Power Electric Building Block):

Typical PEBB

The power electronic building block PEBB (Power Electric Building Block) is a device or module developed on the basis of IPEM that can process electrical energy integration. PEBB is not a specific semiconductor device, it is the integration of different devices and technologies designed according to the optimal circuit structure and system structure. A typical PEBB is shown above. Although it looks a lot like a power semiconductor module, PEBB includes gate drive circuits, level shifting, sensors, protection circuits, power supplies, and passive devices in addition to power semiconductor devices. PEBB has energy interface and communication interface. Through these two interfaces, several PEBBs can form a power electronic system. These systems can be as simple as small DC-DC converters or as complex as large distributed power systems. In a system, the number of PEBBs can vary from one to any number. Multiple PEBB modules work together to complete system-level functions such as voltage conversion, energy storage and conversion, and cathodic impedance matching. The most important feature of PEBB is its versatility.

6. Ultra-high power thyristor

The thyristor (SCR) has increased its power capacity by a factor of nearly 3000 since its inception. Now many countries have been able to stably produce 8kV / 4kA thyristors. Light-triggered thyristors (LTTs) of 8kV/4kA and 6kV/6kA are now in production in Japan. The United States and Europe mainly produce electrically-triggered thyristors. In the past ten years, due to the rapid development of self-shutdown devices, the application field of thyristor has been reduced. However, due to its high voltage and high current characteristics, it is widely used in HVDC, static var compensation (SVC), high-power DC It still occupies a very important position in the application of super power and high voltage frequency conversion speed regulation. It is expected that in the next few years, thyristors will continue to develop in high-voltage, high-current applications.

Many manufacturers now offer high-voltage, high-current GTOs with a rated switching power of 36MVA (6kV/6kA). Typical turn-off increments for conventional GTOs are only 3 to 5. The "squeeze effect" caused by the inhomogeneity during turn-off of GTO makes it necessary to limit dv/dt to 500-1kV/μs during turn-off. For this reason, one has to use bulky and expensive absorption circuits. In addition, its gate drive circuit is more complicated and requires larger drive power. So far, gated power semiconductor devices are the most commonly used in high-voltage (VBR > 3.3kV), high-power (0.5-20 MVA) traction, industrial and power inverters. At present, the highest research level of GTO is 6in, 6kV/6kA and 9kV/10kA. In order to meet the needs of the power system for a three-phase inverter power voltage source of more than 1GVA, it is very likely to develop a 10kA/12kV GTO in the near future, and it is possible to solve the technology of connecting more than 30 high-voltage GTOs in series. A new level of application in power systems.

7. Pulse power closing switching thyristor

The device is particularly suitable for delivering extremely high peak power (several MW), extremely short duration (several ns) discharge closure switch applications such as: lasers, high intensity lighting, discharge ignition, electromagnetic transmitters and radar modulators Wait. The device can be turned on quickly under a high voltage of several kV, does not require a discharge electrode, has a long service life, is small in size, and has a relatively low price. It is expected to replace the high-voltage ion thyratron, ignition tube, spark, Gap switch or vacuum switch, etc.

The unique structure and process characteristics of the device are: the gate-cathode perimeter is very long and forms a highly interwoven structure, the gate area accounts for 90% of the total chip area, while the cathode area only accounts for 10%; the base hole-electron lifetime Very long, the horizontal distance between gate-cathode is less than one diffusion length. The above two structural features ensure that the device can get 100% application of the cathode area when the device is turned on. In addition, the device's cathode electrode uses a thicker metal layer to withstand transient peak currents.

8. New GTO device - integrated gate commutated thyristor

There are currently two alternatives to conventional GTOs: high-power IGBT modules, and new GTO-derived devices - integrated gate-commutated IGCT thyristors. IGCT thyristor is a new type of high-power device. Compared with conventional GTO thyristor, it has many excellent characteristics, such as reliable turn-off without snubber circuit, short storage time, strong turn-on capability, and turn-off gate charge. The total power loss of the application system (including all devices and peripheral components such as anode reactors and snubber capacitors, etc.) is low.

9. High Power Trench Gate Structure IGBT (Trench IGBT) Module

The IGBT cells in today's high-power IGBT modules usually use trench gate IGBTs. Compared with the planar gate structure, the trench gate structure is usually processed with a precision of 1 μm, which greatly improves the cell density. Due to the existence of the gate trench, the junction field effect transistor effect formed between the adjacent cells in the planar gate structure device is eliminated, and a certain electron injection effect is introduced at the same time, which reduces the on-resistance. The conditions are created for increasing the thickness of the long base region and improving the withstand voltage of the device. Therefore, the high-voltage and high-current IGBT devices that have appeared in recent years all adopt this structure.

In 1996, Japan's Mitsubishi and Hitachi respectively successfully developed IGBT modules with huge capacity of 3.3kV/1.2kA. Compared with conventional GTO, their switching time is shortened by 20%, and the gate drive power is only 1/1000 of that of GTO. In 1997, Fuji Electric successfully developed 1kA/2.5kV flat-panel IGBT. The flat-plate crimping structure similar to GTO adopts a more efficient heat dissipation method at both ends of the chip. It is particularly meaningful to avoid a large number of electrode lead-out lines inside the high-current IGBT module, improve reliability and reduce lead inductance, but the disadvantage is that the utilization rate of chip area decreases. Therefore, the high-voltage and high-current IGBT module with the flat-plate crimping structure is also expected to become the preferred power device for high-power and high-voltage converters.

10. Electron injection enhanced gate transistor IEGT (Injection Enhanced Gate Trangistor)

In recent years, Toshiba Corporation of Japan has developed IEGT. Like IGBT, it also has two structures: planar gate and trench gate. The former product is about to come out, and the latter is still under development. IEGT has some advantages of both IGBT and GTO: low saturation voltage drop, wide safe operating area (suction loop capacity is only about 1/10 of GTO), low gate drive power (2 lower than GTO) order of magnitude) and higher operating frequencies. In addition, the device adopts a flat-plate crimping electrode lead-out structure, which is expected to have higher reliability.

Compared with the IGBT, the main features of the IEGT structure are that the gate length Lg is longer, and the lateral resistance value of the N-long base region near the gate side is higher, so holes are injected into the N-long base region from the collector, unlike in IGBTs. As in the case, the lateral flow into the emitter through the P region smoothly, but a hole accumulation layer is formed in this region. To keep this region electrically neutral, the emitter must inject a large amount of electrons into the N-long base region through the N-channel. In this way, high-concentration carrier accumulation is also formed on the emitter side of the N-long base region, and a carrier distribution similar to that in GTO is formed in the N-long base region, thereby better solving the problem of high current and high withstand voltage. contradiction. At present, the device has reached the level of 4.5kV/1kA.

11.MOS gated thyristor

The MOS gate-controlled thyristor fully utilizes the good on-state characteristics, excellent turn-on and turn-off characteristics of thyristors, and is expected to have excellent self-turn-off dynamic characteristics, very low on-state voltage drop and high voltage resistance, and will become the future power device. And there are promising high-voltage and high-power devices in the power system. At present, more than a dozen companies in the world are actively conducting research on MCT. There are three main structures of MOS gated thyristor: MOS field controlled thyristor (MCT), base resistance controlled thyristor (BRT) and emitter switch thyristor (EST). Among them, EST may be the most promising structure among MOS gated thyristors. However, it will take a considerable period of time for this kind of device to become a commercialized practical device and reach the level of replacing GTO.

12. GaAs Diodes

As the switching frequency of the converter continues to increase, the requirements for fast recovery diodes also increase. It is well known that gallium arsenide diodes have superior high-frequency switching characteristics than silicon diodes, but due to process technology and other reasons, gallium arsenide diodes have low withstand voltage, and their practical applications are limited. In order to meet the needs of high-voltage, high-speed, high-efficiency and low-EMI applications, high-voltage GaAs high-frequency rectifier diodes have been successfully developed in Motorola. Compared with silicon fast recovery diodes, this new type of diode has the following notable features: small reverse leakage current changes with temperature, low switching losses, and good reverse recovery characteristics.

13. Silicon carbide and silicon carbide (SiC) power devices

Among the power devices made with novel semiconductor materials, the most promising are silicon carbide (SiC) power devices. Its performance index is an order of magnitude higher than that of gallium arsenide devices. Compared with other semiconductor materials, silicon carbide has the following excellent physical characteristics: high forbidden band width, high saturation electron drift speed, high breakdown strength, Low dielectric constant and high thermal conductivity. The above-mentioned excellent physical properties determine that silicon carbide is an extremely ideal semiconductor material in high temperature, high frequency, and high power applications. Under the same withstand voltage and current conditions, the drift region resistance of SiC devices is 200 times lower than that of silicon. much lower. Moreover, the switching time of SiC devices can reach the order of 10nS, and has a very superior FBSOA.

SiC can be used to manufacture RF and microwave power devices, various high frequency rectifiers, MESFETS, MOSFETS and JFETS, etc. SiC high frequency power devices have been successfully developed at Motorola and are used in microwave and radio frequency devices. GE is developing SiC power devices and high-temperature devices, including sensors for jet engines. Westinghouse has produced very high frequency MESFETs operating at 26GHz. ABB is developing high-power, high-voltage SiC rectifiers and other SiC low-frequency power devices for industrial and power systems.

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