ManufacturerTexas Instruments/Texas Instruments

Data Sheet CSD19531Q5A

Standard package 2500

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series NexFET?

Other name CSD19531Q5A

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 100V

Current at 25°C - Continuous Drain (Id) 100A (Tc)

Driving voltage (Max Rds On, Min Rds On) 6V, 10V

On-resistance (max) 6.4 milliohms @ 16A, 10V at different Id, Vgs

Vgs(th) (max) 3.3V @ 250μA at different Ids

Gate charge (Qg) (max) 48nC @ 10V at different Vgs

Vgs (max) ±20V

Input Capacitance (Ciss) (Max) 3870pF @ 50V at different Vds

FET function-

Power Dissipation (Max) 3.3W (Ta), 125W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Vendor Device Package 8-VSONP (5x6)

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