Manufacturer VISHAY

Data List IRL2203N(S,L)PbF

Standard package 800

Packaging standard tape and reel

Part Status Discontinued

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series HEXFET?

Other namesIRL2203NSTRLPBF

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 30V

Current at 25°C - Continuous Drain (Id) 116A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

On-resistance (max) 7 milliohms @ 60A, 10V at different Id, Vgs

Vgs(th) (max) 3V @ 250μA at different Ids

Gate charge (Qg) (max) 60nC @ 4.5V at different Vgs

Vgs (max) ±16V

Input Capacitance (Ciss) (Max) 3290pF @ 25V at different Vds

FET function-

Power Dissipation (Max) 3.8W (Ta), 180W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Surface Mount Type

Package/Case TO-263-3, D2Pak (2-lead + tab), TO-263AB

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