Manufacturer VISHAY

Data List SI7117DN

Standard package 3000

Packaging standard tape and reel

Active Part Status

Category Discrete Semiconductor Products

Product Family Transistor - FET, MOSFET - Single

Series TrenchFET?

Other namesSI7117DN-T1-GE3

FET type P channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 150V

Current at 25°C - Continuous Drain (Id) 2.17A (Tc)

Driving voltage (Max Rds On, Min Rds On) 6V, 10V

On-resistance (max) 1.2 ohm @ 500mA, 10V at different Id, Vgs

Vgs(th) (max) 4.5V @ 250μA at different Id

Gate charge (Qg) (max) 12nC @ 10V at different Vgs

Vgs (max) ±20V

Input Capacitance (Ciss) (max) 510pF @ 25V at different Vds

FET function-

Power Dissipation (Max) 3.2W (Ta), 12.5W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Package/Enclosure PowerPAK? 1212-8

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