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2022-09-24 13:47:25
Supply INFINEON brand IKW25N120T2FKSA1 original spot contact QQ1640951075
Fast Soft Recovery Anti-Parallel Emitter Controlled Diode
High breakdown voltage 1200V for improved reliability
Short circuit withstand time 10μs
optimal parameter assignment
High durability and temperature stability
low gate charge
Low EMI
VCESAT positive temperature coefficient for easy parallel switching
Complies with JESD-022 application requirements
Lead-free plating; RoHS compliant
IKW25N120T2 application
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IKW25N120T2 technical parameters
Manufacturer: Infineon
Product Category: IGBT Transistor
RoHS: Compliant
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector-emitter maximum voltage VCEO: 1200 V
Collector-Emitter Saturation Voltage: 1.7 V
Gate/Emitter Max Voltage: +/- 20 V
Continuous collector current at 25°C: 50 A
Pd-Power Dissipation: 349 W
Operating temperature range: - 40℃~+ 175℃
Series: TRENCHSTOP IGBT
Package: Tube
Height: 20.95 mm
Length: 15.9 mm
Width: 5.3 mm
Trademark: Infineon Technologies
Gate-Emitter Leakage Current: 200 nA
Product Type: IGBT Transistors
Factory Packing Quantity: 240
Subcategory: IGBTs
Brand Name: TRENCHSTOP
Part number alias: IKW25N120T2FKSA1 IKW25N12T2XK SP000244960
Unit weight: 38 g