AOB264L, the new original spot 0755-82732291 will be shipped on the same day or picked up at the store. The photos are real shots of our products. Due to the excessive number of products, we have not described the parameters of each product. If you want to know more product information and prices, please contact us and purchase, please contact our staff Tel: 0755---82732291/0755---85274662, QQ: 117405 2353/Buy 1852346906QQ: 1755232575 /QQ: 1157611585 Tel: 0755-82732291/0755-85274662.

WeChat ID: SET87680558 or WeChat ID: 87680558

You are welcome to contact us through QQ: 1755232575 /QQ: 1157611585 or telephone 0755-82732291 / 0755-85274662

Provide professional fast samples and complete machine matching services (80 models within the same day, order before 17:00 on the same day, delivery on the same day, received the next day.

MOS tube, is the abbreviation of MOSFET. MOSFET Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor. G: gate gate; S: source source; D: drain drain. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. Such devices are considered symmetrical.

Field effect transistors are divided into PMOS transistors and NMOS transistors, which belong to insulated gate field effect transistors.

PMOS refers to an n-type substrate, a p-channel, and a MOS tube that transports current by the flow of holes. Full name: positive channel Metal Oxide Semiconductor; alias: positive MOS.

Metal oxide semiconductor field effect (MOS) transistors can be divided into two categories: N-channel and P-channel. P-channel silicon MOS field effect transistors have two P+ regions on an N-type silicon substrate, called source and Drain, there is no conduction between the two electrodes, when a sufficient positive voltage is applied to the source (the gate is grounded), the N-type silicon surface under the gate presents a P-type inversion layer, which becomes the channel connecting the source and the drain. . Changing the gate voltage can change the hole density in the channel and thus the resistance of the channel. This MOS field effect transistor is called a P-channel enhancement type field effect transistor. If there is a P-type inversion layer channel without gate voltage on the surface of the N-type silicon substrate, adding an appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is called a P-channel depletion type field effect transistor. Collectively referred to as PMOS transistors.

The hole mobility of the P-channel MOS transistor is low, so that the transconductance of the PMOS transistor is smaller than that of the N-channel MOS transistor under the condition that the geometric size of the MOS transistor and the absolute value of the operating voltage are equal. In addition, the absolute value of the threshold voltage of the P-channel MOS transistor is generally high, requiring a higher operating voltage. The magnitude and polarity of its power supply are incompatible with bipolar transistor-transistor logic circuits. Due to the large logic swing, long charging and discharging process, and small transconductance of the device, PMOS operates at a lower speed. After the emergence of NMOS circuits (see N-channel metal-oxide-semiconductor integrated circuits), most of them have been used by NMOS circuits. replace. However, due to the simple process and low price of PMOS circuits, some medium-scale and small-scale digital control circuits still use PMOS circuit technology.

The MOSFET has three feet, generally G, D, and S. By adding a control signal between G and S, the conduction and cut-off between D and S can be changed. PMOS and NMOS are completely similar in structure, the difference is the doping type of substrate and source and drain. Simply put, NMOS is formed on the substrate of P-type silicon by selective doping to form an N-type doped region as the source and drain regions of NMOS; PMOS is formed on the substrate of N-type silicon by selective doping. The P-type doped region is used as the source and drain regions of the PMOS. The distance between the two source and drain doped regions is called the channel length L, and the effective source and drain region size perpendicular to the channel length is called the channel width W. For this simple structure, the source and drain of the device are completely symmetrical. Only in the application can the specific source and drain be confirmed according to the flow of the source and drain current.

The working principle of PMOS is similar to that of NMOS. Because PMOS is an N-type silicon substrate, the majority carriers are electrons, the minority carriers are holes, and the doping type of the source and drain regions is P-type. Therefore, the working condition of PMOS is that the gate is opposite to the source. Negative voltage is applied to the pole, that is, negatively charged electrons are applied to the gate of the PMOS, while the movable positive holes and the depletion layer with fixed positive charges are induced in the substrate, regardless of the existence of silicon dioxide. The amount of positive charge induced in the substrate is equal to the amount of negative charge on the PMOS gate. When the strong inversion is achieved, under the action of the drain-source voltage which is negative relative to the source terminal, the positive charge holes at the source terminal reach the drain terminal through the conductive P-type channel, forming a source-drain current from source to drain. Similarly, the more negative VGS is (the larger the absolute value), the smaller the on-resistance of the channel and the larger the value of the current.

Like NMOS, the working area of the turned-on PMOS is also divided into non-saturation region, critical saturation point and saturation region. Of course, regardless of NMOS or PMOS, when the inversion channel is not formed, it is in the cut-off region, and the voltage conditions are:

VGS

|VGS|>|VTP (PMOS)|,

It is worth noting that both VGS and VTP of PMOS are negative.

PMOS integrated circuit is a device suitable for applications in low-speed and low-frequency fields. The PMOS integrated circuit is powered by -24V voltage.

The MOS field effect transistor has a high input impedance, which is convenient for direct coupling in the circuit, and it is easy to make a large-scale integrated circuit [1].

Comparison of characteristics of various FETs[edit]

Presented at the International Electron Devices Meeting (IEDM) December 2004: The Dual Stress Liner (DSL) approach results in a 15% and 32% increase in effective drive current in NMOS and PMOS, respectively, and an 11% and 20% increase in saturation drive current, respectively %. The hole mobility of PMOS can be improved by 60% without using SiGe, which has been the focus of other strained silicon research.

ChemicalsEdit

PMOs are periodic mesoporous organosilicas, mesoporous silicon-based organic-inorganic hybrid materials. It is a material in which organic components and inorganic components are hybridized in the pore wall at the molecular level. This kind of material has many unique properties: the organic functional groups are uniformly distributed in the pore wall and do not block the pores, which is conducive to the introduction and diffusion of guest molecules; The organic functional groups in the framework can adjust the physicochemical properties of the material to a certain extent, such as mechanical properties, hydrophilicity/hydrophobicity, and can simultaneously adjust the functionality of pore channels and pore walls. For this reason, PMOs have become a research hotspot in the field of materials science today.

The reports of ordered mesoporous silica materials represented by M41S (Mobile composite of matter) and FSM (folded sheets mesoporous materi-al) in the early 1990s set off an upsurge in the synthesis and application of mesoporous materials. On the one hand, the emergence of ordered mesoporous materials breaks through the pore size limitation of microporous materials (such as zeolites), and can be applied in the fields of organic macromolecules, biological macromolecules immobilization, catalytic conversion, etc.; on the other hand, mesoporous materials Pores with different orientations, sizes, and connectivity in materials are ideal nanoreactors, which can be used to assemble and confine metal complexes and biological macromolecules, and to synthesize nanoparticles. The pore wall composition of the original mesoporous material is silicon oxide. In order to expand its application in different fields, researchers are committed to expanding the study of its pore wall composition, including heteroatom-doped mesoporous silicon oxide, mesoporous metal oxides , metals, sulfides, carbon, polymers, etc., as well as organic modification of mesoporous silica ¨. Among them, organic modification is one of the most convenient and flexible ways to expand its application. For organic functionalized mesoporous silica materials, there are mainly two types: surface-bonded and bridge-bonded organic-inorganic mesoporous materials. Surface-bound organic-inorganic mesoporous materials can introduce organic groups into the pores of mesoporous materials by post-grafting or co-polycondensation. The introduced organic groups can also derive new active centers through further chemical reactions. The active sites of surface-bound organic-inorganic mesoporous materials are relatively easy to access, and there are relatively more types of organic groups to choose from. However, the materials synthesized by this method have disadvantages such as uneven distribution of organic groups, occupying pore space and reducing pore volume. Bridged organic-inorganic mesoporous materials, referred to as PMOs (Periodic Mesoporous Organosilicas), refer to organic-inorganic mesoporous materials in which organic groups exist in the pore wall structure of the material [2].

Safe Operating SystemEdit

PMOS-specific mobile operating system based on YunOS deep customization.

Application in reverse protection circuit

PMOS is used in the reverse protection circuit, and the voltage drop is smaller without the use of diodes, which dissipates less wasteful power. Don't look at there is a parasitic forward diode, but it's completely useless. When the circuit is powered on normally, the GATE is connected to the 0 potential far below the D terminal, and the PMOS is completely turned on. When the power supply is reversely connected, the potential of the GATE is much higher than the S terminal, and the PMOS is completely turned off.

20N06

30N06

50N06

50N03

A04430

STD60NF55LTG

FDP3632

NDD04N60Z-1G

AOD2N60

FDD14AN06

FDS5170N7

IRFR2407TRPBF

IRFR2407

HN75N09AP

FQPF33N10L

AO4812

IRF9540N

AP9561

IRF9540NPBF

AP9561GM-HF

FDS86141

AO4447A

FDD8796

FDS4501H

FDP047AN08A0

AOD438

FDS6692A

FDS86540

MBRF2060CT

MR20200CT

MBR30200CT

MRF20100CT

MBRD20100CT

MBR2045CT

BTA16-800B

MURF86OG

MBA40100CT

MBD6CGC

MBRD10100CT

MBR3045CT

MBRB2045CT

MBR2560CT

MBRB20100CTT4G

MBRD1045T4G

MBRB20200CTT4G

MBR15100CT

MBRD3045CT

RURP30100

FQPF7N60C

MTP33N10E

2SK4145

FQP12N60C

TIP32A

AOT2606L

AOB2606L

AOTF2606L 60VN-Channel?MOSFET

American Bandai Semiconductor (Alpha and_Omega Semiconductor hereinafter referred to as AOS company) is a high-tech company specializing in the design and production of power integrated circuits. AOS provides power management solutions for consumption, computing and other fields. MOSFET is the traditional strength of AOS. It has excellent performance in terms of small loss, and has achieved the world's top three market positions in PC applications. AOS has launched a new UniSiC MOSFET, which is aimed at high-end applications such as large-scale solar inverters, which can play the advantages of SiC MOSFET while significantly reducing Due to the energy loss caused by diodes, it has outstanding advantages in improving energy efficiency. AOS is proud to have comprehensive experience in power semiconductor technology and commercial operations. Compared with other power supply manufacturers as main competitors, AOS is in the new process. AOS is more advanced in terms of its Power MOSFET products using 8-inch wafers, which have a technical advantage in terms of high yield and high cost performance. AOS also deploys the company's proprietary chip processing and packaging technology in the foundry that it cooperates with to match the design. and production of advanced power semiconductor products.

AOT10T60LAOD4128AOB482LAOD452AO6408AON6938

AOTF10T60AON7426AOT262LAO4616AOI4102AO4854

AOD2N60AO4202AOTF260LAO4618AO4566AO4882

AOD3N50AOD512AOWF20S60AON7934AO6403AOB409L

AON2401AOL1458AOW20S60AON6816AON6516AOT7N65

AOD454AAOI4T60AOW20C60AO4611AOV11S60AOTF450L

AO4449AOTF4N60AOT284LAO4842AOV15S60AO4447

AO4411AOD2910AOTF10N90AO4822AAOWF12T60PAOD4124

AO4435AOL1202AOK5N100AO4807AO4440AOTF4185

AO4441AON7458AOT1100LAO4886AON2407AON7611

AON7702LAO3421EAO7405AOT264LAO5803EAO6401A

AON7700LAO4444AON4420AOTF20N60AON6926AON7430

AON7430LAON2260AO5404EAOTF22N50AOT474AO7410

AON7422AOD425AON2405AO4421AOW12N65AO7411

AON7403LAO4354AON6414AAO4438AOD4130AON2240

AON7401LAOI508AO4484AOT27S60LAO4447AAOD421

AON6718LAON6240AOB292LAOT42S60LAOTF10T60PLAOC2421

AON6712AOI510AO3400AAOD240AOT10T60PLAO4442

AOT9N50AOWF4S60AO6415AOT460AOWF10T60PAOD4120

AO3403AO4406AON6250AOT8N80LAOW10T60PAOD4102

AO8830AO4427AOT270LAON3810AOB2608LAON7506

AOK20B135D1AO4433AOT2500LAO4932AOB254LAON7414

AOK75B60D1AOT404AOK40N30LAOB298LAOB14N50AO4496

AOTF5B60DAOD472AOD4504AOT14N50AON6978AOH3106

AOB5B60DAOTF5N50FDAOI9N50AOT254LAON7932AOU1N60

AOTF10B60DAOL1702AOI7N60AOTF8N80AOTF18N65AOD4136

AOT15B60DAON7700AON6518AOK20S60LAOTF266LAO4478

AOK30B60D1AON6410AON7760AO6420AOTF20N40LAO4724

AOK15B60DAOD486AAON6774AO4752AON6403AOI518

AOK40B60DAOL1418AON7462AOD514AON6500AO4712

AOK60B60D1AOL1422AOD4N60AO3162AOD482AOU2N60

AOTF15B60DAOL1424AOW29S50AO3424AOD2610AO7417

AOB15B60DAOL1428AOK29S50LAO3460AON6407AON1610

AOT5B60DAOL1440AOT292LAO3435AO3406AON3419

AOT10B60DAOL1700AON7254AO3404AAO6405AO6402A

AOK50B60D1AON6522AOTF3N80AO4588AO7401AO3409

AOT416AON7421AON6284AO4498EAO3402AO3423

RFP30PO5

MUR1660CTR

IPA032N06N3G

NCE3090K

TIP42C

FQP7N60C

IRFB7437PBF

TIP31C

TIP142T

SUD19P06-60L-E3

SUP85N10-10

FESF16JT

MAC4DSNT4G

Q6025L6

BTA316X-800C

A04576

MDD06N100RH

B137S-600E

NCE69900

PSMN2R0-3OPL

AOT2606

BTA208X-600B

MCR25N

BT138S-600E

MCR310-10G

AOD2606

MCR8NG

NCE7580D

NCE6050A

NCE603S

BUK9612-5B

L6008L6