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MOS tube, is the abbreviation of MOSFET. MOSFET Metal-Oxide Semiconductor Field-Effect Transistor, referred to as Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

Generally, it is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor. G: gate gate; S: source source; D: drain drain. The source (source) and drain (depletion layer) of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. Such devices are considered symmetrical.

Field effect transistors are divided into PMOS transistors and NMOS transistors, which belong to insulated gate field effect transistors.

PMOS refers to an n-type substrate, a p-channel, and a MOS tube that transports current by the flow of holes. Full name: positive channel Metal Oxide Semiconductor; alias: positive MOS.

Metal oxide semiconductor field effect (MOS) transistors can be divided into two categories: N-channel and P-channel. P-channel silicon MOS field effect transistors have two P+ regions on an N-type silicon substrate, called source and Drain, there is no conduction between the two electrodes, when a sufficient positive voltage is applied to the source (the gate is grounded), the N-type silicon surface under the gate presents a P-type inversion layer, which becomes the channel connecting the source and the drain. . Changing the gate voltage can change the hole density in the channel and thus the resistance of the channel. This MOS field effect transistor is called a P-channel enhancement type field effect transistor. If there is a P-type inversion layer channel without gate voltage on the surface of the N-type silicon substrate, adding an appropriate bias voltage can increase or decrease the resistance of the channel. Such a MOS field effect transistor is called a P-channel depletion type field effect transistor. Collectively referred to as PMOS transistors.

The hole mobility of the P-channel MOS transistor is low, so that the transconductance of the PMOS transistor is smaller than that of the N-channel MOS transistor under the condition that the geometric size of the MOS transistor and the absolute value of the operating voltage are equal. In addition, the absolute value of the threshold voltage of the P-channel MOS transistor is generally high, requiring a higher operating voltage. The magnitude and polarity of its power supply are incompatible with bipolar transistor-transistor logic circuits. Due to the large logic swing, long charging and discharging process, and small transconductance of the device, PMOS operates at a lower speed. After the emergence of NMOS circuits (see N-channel metal-oxide-semiconductor integrated circuits), most of them have been used by NMOS circuits. replace. However, due to the simple process and low price of PMOS circuits, some medium-scale and small-scale digital control circuits still use PMOS circuit technology.

The MOSFET has three feet, generally G, D, and S. By adding a control signal between G and S, the conduction and cut-off between D and S can be changed. PMOS and NMOS are completely similar in structure, the difference is the doping type of substrate and source and drain. Simply put, NMOS is formed on the substrate of P-type silicon by selective doping to form an N-type doped region as the source and drain regions of NMOS; PMOS is formed on the substrate of N-type silicon by selective doping. The P-type doped region is used as the source and drain regions of the PMOS. The distance between the two source and drain doped regions is called the channel length L, and the effective source and drain region size perpendicular to the channel length is called the channel width W. For this simple structure, the source and drain of the device are completely symmetrical. Only in the application can the specific source and drain be confirmed according to the flow of the source and drain current.

The working principle of PMOS is similar to that of NMOS. Because PMOS is an N-type silicon substrate, the majority carriers are electrons, the minority carriers are holes, and the doping type of the source and drain regions is P-type. Therefore, the working condition of PMOS is that the gate is opposite to the source. Negative voltage is applied to the pole, that is, negatively charged electrons are applied to the gate of the PMOS, while the movable positive holes and the depletion layer with fixed positive charges are induced in the substrate, regardless of the existence of silicon dioxide. The amount of positive charge induced in the substrate is equal to the amount of negative charge on the PMOS gate. When the strong inversion is achieved, under the action of the drain-source voltage which is negative relative to the source terminal, the positive charge holes at the source terminal reach the drain terminal through the conductive P-type channel, forming a source-drain current from source to drain. Similarly, the more negative VGS is (the larger the absolute value), the smaller the on-resistance of the channel and the larger the value of the current.

Like NMOS, the working area of the turned-on PMOS is also divided into non-saturation region, critical saturation point and saturation region. Of course, regardless of NMOS or PMOS, when the inversion channel is not formed, it is in the cut-off region, and the voltage conditions are:

VGS

|VGS|>|VTP (PMOS)|,

It is worth noting that both VGS and VTP of PMOS are negative.

PMOS integrated circuit is a device suitable for applications in low-speed and low-frequency fields. The PMOS integrated circuit is powered by -24V voltage.

The MOS field effect transistor has a high input impedance, which is convenient for direct coupling in the circuit, and it is easy to make a large-scale integrated circuit [1].

Comparison of characteristics of various FETs[edit]

Presented at the International Electron Devices Meeting (IEDM) December 2004: The Dual Stress Liner (DSL) approach results in a 15% and 32% increase in effective drive current in NMOS and PMOS, respectively, and an 11% and 20% increase in saturation drive current, respectively %. The hole mobility of PMOS can be improved by 60% without using SiGe, which has been the focus of other strained silicon research.

ChemicalsEdit

PMOs are periodic mesoporous organosilicas, mesoporous silicon-based organic-inorganic hybrid materials. It is a material in which organic components and inorganic components are hybridized in the pore wall at the molecular level. This kind of material has many unique properties: the organic functional groups are uniformly distributed in the pore wall and do not block the pores, which is conducive to the introduction and diffusion of guest molecules; The organic functional groups in the framework can adjust the physicochemical properties of the material to a certain extent, such as mechanical properties, hydrophilicity/hydrophobicity, and can simultaneously adjust the functionality of pore channels and pore walls. For this reason, PMOs have become a research hotspot in the field of materials science today.

The reports of ordered mesoporous silica materials represented by M41S (Mobile composite of matter) and FSM (folded sheets mesoporous materi-al) in the early 1990s set off an upsurge in the synthesis and application of mesoporous materials. On the one hand, the emergence of ordered mesoporous materials breaks through the pore size limitation of microporous materials (such as zeolites), and can be applied in the fields of organic macromolecules, biological macromolecules immobilization, catalytic conversion, etc.; on the other hand, mesoporous materials Pores with different orientations, sizes, and connectivity in materials are ideal nanoreactors, which can be used to assemble and confine metal complexes and biological macromolecules, and to synthesize nanoparticles. The pore wall composition of the original mesoporous material is silicon oxide. In order to expand its application in different fields, researchers are committed to expanding the study of its pore wall composition, including heteroatom-doped mesoporous silicon oxide, mesoporous metal oxides , metals, sulfides, carbon, polymers, etc., as well as organic modification of mesoporous silica ¨. Among them, organic modification is one of the most convenient and flexible ways to expand its application. For organic functionalized mesoporous silica materials, there are mainly two types: surface-bonded and bridge-bonded organic-inorganic mesoporous materials. Surface-bound organic-inorganic mesoporous materials can introduce organic groups into the pores of mesoporous materials by post-grafting or co-polycondensation. The introduced organic groups can also derive new active centers through further chemical reactions. The active sites of surface-bound organic-inorganic mesoporous materials are relatively easy to access, and there are relatively more types of organic groups to choose from. However, the materials synthesized by this method have disadvantages such as uneven distribution of organic groups, occupying pore space and reducing pore volume. Bridged organic-inorganic mesoporous materials, referred to as PMOs (Periodic Mesoporous Organosilicas), refer to organic-inorganic mesoporous materials in which organic groups exist in the pore wall structure of the material [2].

Safe Operating SystemEdit

PMOS-specific mobile operating system based on YunOS deep customization.

Application in reverse protection circuit

PMOS is used in the reverse protection circuit, and the voltage drop is smaller without the use of diodes, which dissipates less wasteful power. Don't look at there is a parasitic forward diode, but it's completely useless. When the circuit is powered on normally, the GATE is connected to the 0 potential far below the D terminal, and the PMOS is completely turned on. When the power supply is reversely connected, the potential of the GATE is much higher than the S terminal, and the PMOS is completely turned off.

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American Bandai Semiconductor (Alpha and_Omega Semiconductor hereinafter referred to as AOS company) is a high-tech company specializing in the design and production of power integrated circuits. AOS provides power management solutions for consumption, computing and other fields. MOSFET is the traditional strength of AOS. It has excellent performance in terms of small loss, and has achieved the world's top three market positions in PC applications. AOS has launched a new UniSiC MOSFET, which is aimed at high-end applications such as large-scale solar inverters, which can play the advantages of SiC MOSFET while significantly reducing Due to the energy loss caused by diodes, it has outstanding advantages in improving energy efficiency. AOS is proud to have comprehensive experience in power semiconductor technology and commercial operations. Compared with other power supply manufacturers as main competitors, AOS is in the new process. AOS is more advanced in terms of its Power MOSFET products using 8-inch wafers, which have a technical advantage in terms of high yield and high cost performance. AOS also deploys the company's proprietary chip processing and packaging technology in the foundry that it cooperates with to match the design. and production of advanced power semiconductor products.

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