BSC160N10NS3G...

  • 2022-09-24 13:47:25

BSC160N10NS3G original imported spot

Category Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

ManufacturerInfineon

Series OptiMOS?

Packaging Tape (TR) Cut Tape (CT)

Active Part Status

FET type N channel

Technology MOSFET (Metal Oxide)

Current at 25°C - Continuous Drain (Id) 8.8A (Ta), 42A (Tc)

Driving Voltage (Max Rds On, Min Rds On) 6V, 10V

On-resistance (max) at different Id, Vgs 16mΩ @ 33A, 10V

Vgs(th) (max) at different Id 3.5V @ 33μA

Vgs (max) ±20V

FET function-

Power Dissipation (Maximum) 60W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Package/Case 8-TDFN

Drain-source voltage (Vdss) 100V

Gate charge (Qg) (max) at different Vgs 25nC @ 10V

Input Capacitance (Ciss) (Max) at Vds 1700pF @ 50V

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