Category Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

ManufacturerInfineon

Series HEXFET?

Packaging Tape (TR) Cut Tape (CT)

Active Part Status

FET type N channel

Technology MOSFET (Metal Oxide)

Current at 25°C - Continuous Drain (Id) 30A (Tc)

Driving Voltage (Max Rds On, Min Rds On) 5V, 10V

On-resistance (max) at different Id, Vgs 14 milliohms @ 30A, 10V

Vgs(th) (max) at different Id 3V @ 250μA

Vgs (max) ±16V

FET function-

Power Dissipation (Maximum) 120W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Surface Mount Type

Package/Case TO-252-3, DPak (2 leads + tab), SC-63

Drain-source voltage (Vdss) 55V

Gate charge (Qg) (max) at different Vgs 92nC @ 10V

Input Capacitance (Ciss) (Max) at Vds 1870pF @ 25V

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