Category Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

ManufacturerInfineon

Series HEXFET?

Packaging Tape and Reel (TR) Cut Tape (CT)

Part Status Discontinued

FET type N channel

Technology MOSFET (Metal Oxide)

Current at 25°C - Continuous Drain (Id) 260A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

On-resistance (max) at different Id, Vgs 3 milliohms @ 38A, 10V

Vgs(th) (max) at different Id 2.5V @ 250μA

Vgs (max) ±20V

FET function-

Power Dissipation (Maximum) 330W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Surface Mount Type

Package/Case TO-263-3, D2Pak (2-lead + tab), TO-263AB

Drain-source voltage (Vdss) 30V

Gate Charge (Qg) (Max) at Vgs 110nC @ 4.5V

Input Capacitance (Ciss) (Maximum) at Vds 5890pF @ 15V

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