Category Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

ManufacturerInfineon

Series HEXFET?, StrongIRFET?

Packaging Tape and Reel (TR) Cut Tape (CT)

Active Part Status

FET type N channel

Technology MOSFET (Metal Oxide)

Current at 25°C - Continuous Drain (Id) 120A (Tc)

Driving Voltage (Max Rds On, Min Rds On) 6V, 10V

On-resistance (max) at different Id, Vgs 2.5 milliohms @ 100A, 10V

Vgs(th) (max) at different Id 3.9V @ 100μA

Vgs (max) ±20V

FET function-

Power Dissipation (Maximum) 208W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Surface Mount Type

Package/Case TO-263-3, D2Pak (2-lead + tab), TO-263AB

Drain-source voltage (Vdss) 40V

Gate charge (Qg) (max) at different Vgs 135nC @ 10V

Input Capacitance (Ciss) (Max) at Vds 4730pF @ 25V

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