FQD18N20V2TM ...

  • 2022-09-24 13:47:25

FQD18N20V2TM only original original only

Category Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

Manufacturer ON

Series QFET?

Packaging Tape (TR) Cut Tape (CT)

Active Part Status

FET type N channel

Technology MOSFET (Metal Oxide)

Current at 25°C - Continuous Drain (Id) 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 10V

On-resistance (max) at different Id, Vgs 140mΩ @ 7.5A, 10V

Vgs(th) (max) at different Id 5V @ 250μA

Vgs (max) ±30V

FET function-

Power Dissipation (Maximum) 2.5W (Ta), 83W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount Type

Package/Case TO-252-3, DPak (2 leads + tab), SC-63

Drain-source voltage (Vdss) 200V

Gate charge (Qg) (max) at different Vgs 26nC @ 10V

Input Capacitance (Ciss) (Maximum) at Vds 1080pF @ 25V

Product Code FQD1

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