Category Discrete Semiconductor Products

Transistor - FET, MOSFET - Single

ManufacturerInfineon

Series HEXFET?

Packaging Pipe Fittings

Active Part Status

FET type N channel

Technology MOSFET (Metal Oxide)

Current at 25°C - Continuous Drain (Id) 17A (Tc)

Drive Voltage (Max Rds On, Min Rds On) 10V

On-resistance (max) at different Id, Vgs 75mΩ @ 10A, 10V

Vgs(th) (max) at different Id 4V @ 250μA

Vgs (max) ±20V

FET function-

Power Dissipation (Max) 45W (Tc)

Operating temperature -55°C ~ 175°C (TJ)

Mounting Type Through Hole

Package/Case TO-251-3 Short Lead, IPak, TO-251AA

Drain-source voltage (Vdss) 55V

Gate charge (Qg) (max) at different Vgs 20nC @ 10V

Input Capacitance (Ciss) (Max) at Vds 370pF @ 25V

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