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2022-09-24 13:47:25
SI7117DN-T1-GE3 imported original spot
Category Discrete Semiconductor Products
Transistor - FET, MOSFET - Single
ManufacturerVishay
Series TrenchFET?
Packaging Tape (TR) Cut Tape (CT)
Active Part Status
FET type P channel
Technology MOSFET (Metal Oxide)
Current at 25°C - Continuous Drain (Id) 2.17A (Tc)
Driving Voltage (Max Rds On, Min Rds On) 6V, 10V
On-resistance (max) at different Id, Vgs 1.2 ohm @ 500mA, 10V
Vgs(th) (max) at different Id 4.5V @ 250μA
Vgs (max) ±20V
FET function-
Power Dissipation (Maximum) 3.2W (Ta), 12.5W (Tc)
Operating temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Type
Package/Enclosure PowerPAK? 1212-8
Drain-source voltage (Vdss) 150V
Gate charge (Qg) (max) at different Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) at Vds 510pF @ 25V
Product number SI7117
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