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2022-09-24 13:47:25
MRF6S9125N original spot hot sale
Shenzhen Xianghong Weiye Electronics Co., Ltd. Mr. Li 18926457200
MRF6S9125N RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Manufacturer: NXP
Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors
Transistor Polarity: N-Channel
Technology: Si
Vds-drain-source breakdown voltage: 68 V
Minimum Operating Temperature:- 65 C
Maximum operating temperature: + 150 C
Installation style: SMD/SMT
Package/Case:TO-270-4
Configuration:Single Dual Drain Dual Gate
Height: 2.64 mm
Length: 17.58 mm
Type: RF Power MOSFET
Width: 9.07 mm
Trademark: NXP Semiconductors
Channel Mode:Enhancement
Product Type: RF MOSFET Transistors
Subcategory: MOSFETs
Vgs - Gate-Source Voltage: - 0.5 V, 12 V
Unit weight: 1.635 g