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2022-09-24 13:47:25
RU8205C6
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Shenzhen Chenhao Technology Electronic Components (1755232575) 2021-2-19 6:27:08
what is mos tube
The mos tube is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor. The source and drain of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. Such devices are considered symmetrical.
The bipolar transistor amplifies the small change of the current at the input end and outputs a large current change at the output end. The gain of a bipolar transistor is defined as the ratio of output to input current (beta). Another type of transistor, called a field effect transistor (FET), converts changes in input voltage into changes in output current. The gain of a FET is equal to its transconductance, defined as the ratio of the change in output current to the change in input voltage. The most common ones on the market are N-channel and P-channel. For details, refer to the picture on the right (N-channel depletion MOS transistor). The common P-channel is a low-voltage MOS tube.
FETs affect the current flowing through the transistor by projecting an electric field on an insulating layer. In fact no current flows through this insulator, so the gate current of the FET is very small. Ordinary FETs use a thin layer of silicon dioxide as the insulator under the GATE. Such transistors are called metal-oxide-semiconductor (MOS) transistors, or, metal-oxide-semiconductor field effect transistors (MOSFETs). Because MOS tubes are smaller and more power efficient, they have replaced bipolar transistors in many applications.
Advantages of mos tube
1. Can be applied to magnification. Since the input impedance of the FET amplifier is high, the coupling capacitor can be small, and the electrolytic capacitor is not necessary.
2. The high input impedance is very suitable for impedance transformation. It is often used in the input stage of multi-stage amplifier for impedance transformation.
3. Can be used as a variable resistor.
4. Can be easily used as a constant current source.
5. Can be used as an electronic switch.
6. Great flexibility in circuit design. The gate bias voltage can be positive, negative or zero, the triode can only work under the forward bias, and the electron tube can only work under the negative bias. In addition, the input impedance is high, which can reduce the load of the signal source and is easy to match with the previous stage.
MOS tube type and structure
MOSFET is a type of FET (the other is JFET), which can be made into enhancement mode or depletion mode, P-channel or N-channel, a total of 4 types, but only the enhancement-mode N-channel MOS is actually used. Tube model and enhanced P-channel MOS tube model, so NMOS is usually mentioned, or PMOS refers to these two. As for why not to use depletion-type MOS tubes, it is not recommended to get to the bottom of it. For these two enhanced MOS tubes, NMOS is more commonly used. The reason is that the on-resistance is small and it is easy to manufacture. Therefore, in the application of switching power supply and motor drive, NMOS is generally used. In the following introduction, NMOS is mainly used. There is parasitic capacitance between the three pins of the MOS tube, which is not what we need, but is caused by the limitation of the manufacturing process. The existence of parasitic capacitance makes it more troublesome to design or select the driving circuit, but there is no way to avoid it, which will be described in detail later. It can be seen on the schematic diagram of the MOS tube that there is a parasitic diode between the drain and the source. This is called the body diode, and this diode is very important when driving inductive loads. By the way, the body diode only exists in a single MOS transistor, and usually does not exist inside the integrated circuit chip.
Choosing a correct MOS tube can control the manufacturing cost well. It is important to match the product with an appropriate component, which will give full play to its "screw" in the future use of the product. ” to ensure that the device has a stable and lasting application effect. So in the face of the dazzling array of MOS tubes on the market, how to choose? Next, we will explain the selection requirements of MOS tubes in 7 steps.
MOS tube is the basic component of electronic manufacturing, but when faced with different packages, different characteristics, and different MOS tubes, how to choose? Is there a worry-free and labor-saving selection method?
The first is to determine the selection of N and P channels
There are two types of MOS tubes, namely N-channel type and P-channel type. The structures are different, and the voltage polarity used will also be different. Therefore, before deciding which product to choose, it is necessary to first determine the use of N-channel. Or a P-channel MOS tube.
MOS tube selection skills
Two structures of MOS tubes: N-channel type and P-channel type
In a typical power application, when a MOS transistor is grounded and the load is connected to the mains voltage, the MOS transistor constitutes a low-side switch. In the low-side switch, an N-channel MOS transistor should be used because of the voltage required to turn off or turn on the device.
When the MOS tube is connected to the bus and the load is grounded, a high-side switch is used. Usually, a P-channel MOS transistor is used in this topology, which is also due to the consideration of voltage driving.
To select the right device for an application, it is necessary to determine the voltage required to drive the device and a method that can be easily implemented in the design.
The second step is to determine the voltage
The higher the voltage rating, the higher the cost of the device. From a cost perspective, it is also necessary to determine the required voltage rating, that is, the maximum voltage that the device can withstand. According to practical experience, the rated voltage should be greater than the mains voltage or bus voltage, and generally leave a voltage margin of 1.2 to 1.5 times, so as to provide sufficient protection so that the MOS tube will not fail.
As far as the selection of MOS tubes is concerned, it is necessary to determine the large voltage that may be borne between the drain and the source, that is, a large VDS. Since the large voltage that the MOS tube can withstand varies with temperature, the designer must test the voltage variation range over the entire operating temperature range. The rated voltage must have sufficient margin to cover this variation and ensure that the circuit does not fail.
In addition, design engineers also need to consider other safety factors: such as voltage transients induced by switching electronics (often with motors or transformers). In addition, the rated voltage of different applications is also different; usually portable devices use 20V MOS tubes, FPGA power supplies are 20-30V MOS tubes, and MOS tube VDS is 450-600V for 85-220V AC applications.
The third step is to determine the current
After the voltage is determined, the next thing to determine is the current of the MOS tube. It needs to be determined according to the circuit structure. The rated current of the MOS tube should be a large current that the load can withstand under all conditions; similar to the case of voltage, the rated current of the MOS tube must meet the needs of the system when the peak current is generated. The determination of the current needs to start from two aspects: continuous mode and pulse spike. In the continuous conduction mode, the MOS tube is in a steady state, and the current continuously flows through the device at this time. A pulse spike is when there is a large surge (or peak current) flowing through the device. Once the high current under these conditions is determined, it is simply a matter of choosing a device that can handle this high current.
After selecting the rated current, the conduction loss must also be calculated. In practice, the MOS tube is not an ideal device, because there will be power loss during the conduction process, that is, conduction loss. The MOS tube is like a variable resistor when it is "on", which is determined by the on-resistance RDS(ON) of the device and varies significantly with temperature. The power loss of the device is calculated as PTRON=Iload2×RDS(ON) (Iload: large DC output current). Since the on-resistance will change with temperature, the power loss will also change proportionally. The higher the voltage VGS applied to the MOS tube, the smaller the RDS(ON); otherwise the RDS(ON) will be higher.
For the system designer, this requires a trade-off. For portable designs, a lower voltage can be used (more common); for industrial designs, a higher voltage can be used. Note that the RDS(ON) resistance will rise slightly with current.
Technology has a significant impact on device characteristics, as some technologies tend to increase RDS(ON) when increasing large VDS (drain-source voltage rating). For such a technology, if the VDS and RDS(ON) are to be reduced, then the die size must be increased, thereby increasing the package size and associated development costs associated with it. Several techniques exist in the industry to try to control the increase in wafer size, chief among which are channel and charge balancing techniques.
The fourth step is to determine the thermal requirements
After determining the current, it is necessary to calculate the cooling requirements of the system. Designers must consider two different scenarios: bad and real. It is recommended to use the calculation result for the bad case, because this result provides a larger safety margin to ensure that the system does not fail. There are also some measurement data that need attention on the MOS tube data sheet, such as the thermal resistance between the semiconductor junction of the packaged device and the environment, and the large junction temperature.
The junction temperature of the device is equal to the maximum ambient temperature plus the product of thermal resistance and power dissipation, that is, junction temperature = maximum ambient temperature + (thermal resistance × power dissipation). According to this equation, the high power dissipation of the system can be solved=I2×RDS(ON).
Since the designer has determined the large current that will pass through the device, the RDS(ON) at different temperatures can be calculated. It is worth noting that when dealing with simple thermal models, the designer must also consider the thermal capacity of the semiconductor junction/device case and case/environment; that is, the requirement that the printed circuit board and package do not heat up immediately.
Avalanche breakdown (meaning that the reverse voltage on a semiconductor device exceeds a large value and forms a strong electric field that increases the current in the device) will dissipate power, increase the temperature of the device, and possibly damage the device. Semiconductor companies perform avalanche tests on their devices, calculate their avalanche voltages, or test the robustness of the devices.
There are two methods for calculating the rated avalanche voltage; one is statistical method and the other is thermal calculation. Thermal calculations are widely used because they are more practical. In addition to computing, technology also plays a big role in the avalanche effect. For example, an increase in die size increases avalanche resistance and ultimately improves device robustness. For the end user, this means a larger package in the system.
The fifth step is to determine the switch performance
The next step in selecting a MOS tube is to determine its switching performance. There are many parameters that affect switching performance, but the important ones are gate/drain, gate/source, and drain/source capacitance. Because these capacitors must be charged each time they switch, switching losses will be generated in the device; the switching speed of the MOS tube is also reduced, and the device efficiency is also reduced; among them, the gate charge (Qgd) affects the switching performance. big.
In order to calculate the total loss of the device during the switching process, the designer must calculate the loss during the turn-on process (Eon) and the loss during the turn-off process (Eoff), and then deduce the total power of the MOS transistor switch: Psw=(Eon+Eoff)×switch frequency.
MOS tube selection skills
The switch circuit composed of enhanced NMOS transistor
The sixth step is to consider the packaging factor
Different package sizes of MOS tubes have different thermal resistance and power dissipation, and the heat dissipation conditions and ambient temperature of the system need to be considered (such as whether there is air cooling, the shape and size of the heat sink, and whether the environment is closed or not). The basic principle is On the premise of ensuring the temperature rise of the power MOS tube and the system efficiency, a power MOS tube with more general parameters and packaging is selected.
Common MOS tube packages are:
①Plug-in package: TO-3P, TO-247, TO-220, TO-220F, TO-251, TO-92;
②Surface mount type: TO-263, TO-252, SOP-8, SOT-23, DFN5*6, DFN3*3;
MOS tube selection skills
TO package MOS tube
Different packaging forms, the corresponding limit current, voltage and heat dissipation effect of MOS tube will be different, a brief introduction is as follows.
TO-3P/247: It is a commonly used packaging form for medium and high voltage and high current MOS tubes. The product has the characteristics of high withstand voltage and strong breakdown resistance, and is suitable for medium voltage and high current (current above 10A, withstand voltage below 100V) Use in places with a withstand voltage of 120A or more and a withstand voltage of 200V or more.
TO-220/220F: The MOS tubes of these two package styles are similar in appearance and can be used interchangeably. However, the TO-220 has a heat sink on the back, and its heat dissipation effect is better than that of the TO-220F, and the price is relatively expensive. These two packaged products are suitable for applications with medium voltage and high current below 120A and high voltage and high current below 20A.
TO-251: This package product is mainly used to reduce the cost and reduce the product volume, and is mainly used in the environment of medium voltage and high current below 60A and high voltage below 7N.
TO-92: Only low-voltage MOS tubes (current below 10A, withstand voltage below 60V) and high-voltage 1N60/65 are used in this package, mainly to reduce costs.
TO-263: It is a variant of TO-220. It is mainly designed to improve production efficiency and heat dissipation. It supports extremely high current and voltage. It is more common in medium-voltage and high-current MOS tubes below 150A and above 30V.
TO-252: It is one of the current mainstream packages, suitable for environments where high voltage is below 7N and medium voltage is below 70A.
SOP-8: This package is also designed to reduce costs. Generally, it is more common in medium-voltage MOS tubes below 50A and low-voltage MOS tubes around 60V.
SOT-23: It is suitable for use in the environment of several A current and 60V and below voltage. It is divided into two types: large volume and small volume. The main difference is that the current value is different.
Shenzhen Chenhao Technology Electronic Components (1755232575) 2021-2-19 6:27:35
The working principle of MOS tube (with N-channel enhancement mode MOS field effect tube) is to use VGS to control the amount of "induced charges" to change the condition of the conductive channel formed by these "induced charges", and then to control the leakage. purpose of polar current. During the manufacture of the tube, a large number of positive ions appear in the insulating layer through the process, so more negative charges can be induced on the other side of the interface. These negative charges connect the N region of the hypertonic impurities and form a conductive channel channel, there is a large drain current ID even when VGS=0. When the gate voltage changes, the amount of charges induced in the channel also changes, and the width of the conductive channel also changes, so the drain current ID changes with the gate voltage.
Transistor Polarity: N Channel
Drain current, Id max: 100mA
Voltage, Vds Max: 30V
On-state resistance, Rds(on): 8ohm
Voltage @ Rds measurement: 4V
Voltage, Vgs High: 20V
Power consumption: 200mW
Operating temperature range: -55°C to +150°C
Package Type: SOT-323
Package Type: SOT-323
Transistor Type: Small Signal
Voltage Vgs @ Rds on Measurement: 4V
Voltage, Vds typical: 30V
Current, Id Continuous: 10mA
Surface Mount Devices: Surface Mount
Threshold voltage, Vgs th typ: 1.5V
The mos tube is a metal-oxide-semiconductor field effect transistor, or a metal-insulator-semiconductor. The source and drain of the MOS tube can be reversed, and they are all N-type regions formed in the P-type backgate. In most cases, these two regions are the same, even if the two ends are reversed, it will not affect the performance of the device. Such devices are considered symmetrical.
KNX4820B
KNX6650A
KNX3308
KIA4603A
KIA8205
KIA75FN75
KNP9120A
LT1962EMS8-3.3
LT1962EMS8-3#PBF
LT1962EMS8#TRPBF
LT1962EMS8-5#TRPBF
LTC2180IUP#PBF
LTC2183IUP#PBF
LTC2188CUP#PBF
LTC2188IUP#PBF
EK-K7-KC705-G
LTC1604ACG#PBF
LTC1604AIG#PBF
LTC2983ILX#PBF
LTC2983CLX#PBF
LM5134ASD/NOPB
LT3748IMS#TRPBF
LTC1643ALIGN#PBF
LTC1643AL-1IGN#PBF
LT3085IMS8E#PBF
KNH8150A
KNF7160A
KND840U
KNF4665A
KNF4365A
KIA2312
KIA3306A
KIA2404A
KIA2803A
KIA5N60E
KIA3204A
KIA4750S
KIA100N03A
KIA3506A
KIA2807N
KIA830S
LT4351IMS#PBF
LTM8022EV#PBF
LTM8026IY#PBF
LTM8026IV#PBF
LTM8026EY#PBF
LTM8022IV#PBF
LTM8024EV#PBF
LTM8027IV#PBF
LTM8025IV#PBF
LTM8027EV#PBF
LTM8023EV#PBF
LTM8023IV#PBF
LTM8021IV#PBF
LTC2756ACG#PBF
LTC2756BIG#PBF
LTC2756AIG#PBF
LTC2756BCG#PBF
LTC2757AILX#PBF
LTC2758AILX#PBF
LTC2755CUP-16#PBF
LTC2755IUP-16#PBF
LTC2754AIUKG-16#PBF
LTC2754ACUKG-16#PBF
LTC2755IUP-14#PBF
YAT-7+
LM5020MM-2
LT5521EUF#PBF
LT5560EDD#PBF
LT5578IUH#PBF
LT5557EUF#PBF
LT5522EUF#PBF
LT5537EDDB#PBF
LT5534ESC6#TRPBF
LT5400AHMS8E-2#PBF
LT5400AIMS8E-5#PBF
LT5514IFE#PBF
LT5514EFE#PBF
LTM4630IV#PBF
LTM4634IY#PBF
LTM4632IY#PBF
LTM4633EY#PBF
LTM4636IY#PBF
LTM4630EV#PBF
LTM4633IY#PBF
LTM4630AIY#PBF
LTM4630AEY#PBF
LTM4633MPY#PBF
LTM4630AIV#PBF
LTM4636IY-1#PBF
LTM4637IY#PBF
LTM4631IV#PBF
LT1491ACS#PBF
LT1490ACS8#PBF
LT3437EFE#PBF
LTM8067IY#PBF
LTM8065IY#PBF
LTM8068IY#PBF
LTM8063IY#PBF
LTM8064EY#PBF
LTM8063EY#PBF
LTM8064IY#PBF
LTM4643IY#PBF
LTM4642EY#PBF
LTM4647IY#PBF
LTM4646IY#PBF
LTM4643IV#PBF
LTM4644MPY#PBF
LTM4644IY-1#PBF
HMC460LC5
LT1763CS8#TRPBF
LT1764AEQ#TRPBF
KIA3N80H
KIA65N06
KIA50N03A
KIA2804N
KIA2910N
KIA2906A
KIA6720N
KIA4810A
KIA4820N
KIA9926A
KIA8606A
KIA8205A
KIA7610
KIA7115A
KIA6410A
KIA6115A
KIA6110A
KIA6035A
KIA5610B
KIA5610
KIA3710Z
KIA3510A
LT1964ES5-5#TRPBF
LT1763IS8-5#TRPBF
LT1963AEST-1.5#PBF
LT1964ES5-SD#TRPBF
LT1964ES5-BYP#TRPBF
LT1964ES5-BYP#TRMPBF
LT1358CN8#PBF
LT1963AEQ#PBF
LT1963AES8#PBF
LT1761ES5-2.5#TR
LT1763CS8-5#TRPBF
LT1764AEQ-ADJ#PBF
lt1790AIS6-5#TRPBF
LT1763CS8-2.5#TRPBF
LT1107CS8#TR
LT1763CS8#PBF
LT1129CST-3.3#PBF
LT1963AES8-2.5#PBF
LT1963AEST-2.5#PBF
ZNBT-60-1W+
AD680JRZ-REEL7
AD-FMCOMMS3-EBZ
AD-FMCOMMS4-EBZ
LTC2314HTS8#TRPBF
LTC2313ITS8-14#TRPBF
LTM4677IY#PBF
LTM4675IY#PBF
LTM4675EY#PBF
LTM4676AIY#PBF
KIA3508A
KIA3423
KIA3415
KIA3414
KIA3409
KIA3407
KIA3402
KIA3401
KIA3400
KIA3205S
KIA3108A
KIA2808A
KIA2806A
KIA2341
KIA2306
KIA2305
KIA2304
KIA2302
KIA2301
LTM4676AEY#PBF
OPA140AIDGKR
LTC2299IUP#PBF
LTC2292IUP#PBF
LTC2298IUP#PBF
LTC1266IS#PBF
AD9250BCPZ-250
LTC2440IGN#PBF
LTC2445IUHF#PBF
LTC2448IUHF#PBF
LTC4151CMS#PBF
LTC4151IMS#PBF
LTC4151IMS-1#PBF
LTC4151CMS-1#PBF
LTC4151IS-2#PBF
LTC3589EUJ#PBF
LTC2668IUJ-16#PBF
LTC2668CUJ-16#PBF
LTC2664IUH-16#PBF
AD9914BCPZ
LTM8048MPY#PBF
LTM8045IY#PBF
LTM8040EV#PBF
SS12
SS14
SS16
SS110
SS22
SS24
JST7812CV
JST7815CV
JST7818CV
JST7824CV
LTM8042IV#PBF
LTM8049IY#PBF
LTM8046IY#PBF
LTM8042EV#PBF
LTM8045MPY#PBF
LTC2485CDD#TRPBF
CLC5801IMX
LTC2990IMS#PBF
LT3796EFE#PBF
LT8640SIV#PBF
LT8640SEV#PBF
LTC2370IMS-16
LTC2379IMS-18#PBF
LTC2376IMS-20#PBF
LTC2379CMS-18#PBF
LTC2378CMS-20#PBF
LTC2378IMS-18#PBF
LTC2377CMS-16#PBF
LTC2378CMS-18#PBF
LTC2376CMS-18#PBF
LTC4415EDHC#PBF
LTC4414EMS8#PBF
LTC4416IMS#TRPBF
LTC4416EMS#TRPBF
LTC4411ES5#TRPBF
LTC4412ES6#TRPBF
LTC4412IS6#TRPBF
KIA2300
KIA1404A
KIA840S
KIA840H
KIA830H
KIA740H
KIA730H
KIA75NF75
KIA70N06
KIA50N06B
KIA50N06
KIA40N20A
KIA40N06B
KIA30N06B
KIA30N03B
KIA28N50H
KIA24N50H
KIA20N50H
KIA20N40H
KIA18N50H
KIA18N20A
KIA16N50H
KIA13N50H
LTC4415IMSE#TRPBF
LTC4411ES5#TRMPBF
LTC4415EMSE#TRPBF
LTC4414EMS8#TRPBF
WSP4626
WSP4606
WSP4606A
WSP4608
WSP4616
WSP4620
WSP4067
WSP4067B
WSP6067
WSF2060
WSF3036A
WSF3036
WSF3038
WSF3040
WSF3087
WSF3085
WSF3085A
WSF30100
WSF30160
WSP4626
WSP4606
WSP4606A
WSP4608
WSP4616
WSP4620
WSP4067
WSP4067B
WSP6067
WSF2060
WSF3036A
WSF3036
WSF3038
WSF3040
WSF3087
WSF3085
WSF3085A
WSF30100
WSF30160
WSP4626
WSP4606
WSP4606A
WSP4608
WSP4616
WSP4620
WSP4067
WSP4067B
WSP6067
WSF2060
WSF3036A
WSF3036
WSF3038
WSF3040
WSF3087
WSF3085
WSF3085A
WSF30100
WSF30160
WSP4626
WSP4606
WSP4606A
WSP4608
WSP4616
WSP4620
WSP4067
WSP4067B
WSP6067
WSF2060
WSF3036A
WSF3036
WSF3038
WSF3040
WSF3087
WSF3085
WSF3085A
WSF30100
WSF30160
LTC4414IMS8#PBF
LT3070EUFD#PBF
LT3486IFE#PBF
LTC4234IWHH#PBF
LTC4234HWHH#PBF
LTC6102IMS8#TRPBF
LTC6103IMS8#TRPBF
LTC6103CMS8#TRPBF
LTC6102CMS8#TRPBF
LTC4355CS#PBF
LTC4355IMS#PBF
LTC4354CS8#PBF
LTC4354IS8#PBF
LTC4358IFE#PBF
LTC4358CFE#PBF
LTC4357CDCB#TRPBF
WSP4626
WSP4606
WSP4606A
WSP4608
WSP4616
WSP4620
WSP4067
WSP4067B
WSP6067
WSF2060
WSF3036A
WSF3036
WSF3038
WSF3040
WSF3087
WSF3085
WSF3085A
WSF30100
WSF30160
LTC4357IDCB#TRPBF
LTC4357IMS8#TRPBF
LTC4357CMS8#TRPBF
LT8471IFE#PBF
LT8471EUFD#PBF
LT1761ES5-1.5#TRPBF
LT1761ES5-1.8#TRPBF
LT1761ES5-3.3#TRPBF
LT1761ES5-2.8#TRPBF
LT8490EUKJ#PBF
LT8490IUKJ#PBF
LTC4067EDE#TRPBF
AS282
LTC3407EMSE-2#TRPBF
LTC2338IMS-18#PBF
AS514
ADUC7026BSTZ62-RL
LTC7812EUH#PBF
LTC7812IUH#PBF
LTC7149EFE#PBF
LTC7150SIY#PBF
LTC7003EMSE#PBF
LTC7810ILXE#PBF
KIA20TB40
KIA18TB40
KIA10TB60
KIA08TB60B
KIA05TB60
KIA05TB40
KIA06TB60D
KIA15TB60
WSF4060
WSF6038
WSF20N06
WSF28N06
WSF40N06S
WSF40N06D
WSF40N06
WSF40N06A
WSF60N06
WSF60N06A
WSF80N06
WSF60100
WSF07N10
WSF12N10
WSF15N10
KIA6OTB30
KIA30TB40D
KIA08TB70D
KCY3104S
KNX4360A
KIA4660
KNX3406
KNX9130A
KPX4703A
LTC3703EGN-5
LTC3704IMS#PBF
LTC3703EGN#PBF
LTC3703EG#TRPBF
LTC3703EGN#TRPBF
LT3010EMS8E-5#PBF
LTC2389CLX-18#PBF
LT1963AMPQ#PBF
LTM2882EV-3#PBF
LT3465ES6#TRPBF
LTC2320IUKG-16#PBF
ISL1533IRZ
KIA12N65H
KIA12N60H
KIA10N80H
KIA10N65H
KIA10N60H
KIA9N90S
KIA9N90H
KIA8N60H
KIA7N65H
KIA7N80H
KIA7N60U
KIA7N60H
KIA6N70S
KIA6N70H
WSF15N10G
WSF15N10A
WSF25N10
WSF40N10A
WSF40N10
WSF45N10G
WSF50N10
WSF70N10
WSF18N15
WSF20N15
WSF07N20
WSF09N20
WSF20N20
WSF25N20
WSF10N40
WSF20P03
WSF40P03
WSF60P03
WSF70P03
KIA6N65H
KIA4N65H
KIA4N60H
KIA2N60H
KIA2N65H
KIA1N65H
KIA1N60H
WST2008
WST2007
WST2006
LT8705AIFE#PBF
LT8705AIUHF#PBF
LT3755EUD#PBF
LT3755EMSE-1#PBF
LT3755IMSE-1#PBF
LTZ1000ACH#PBF
LT3790IFE#TRPBF
LT3790EFE#TRPBF
LTC2392CLX-16
LTC2393IUK-16#PBF
AD5791BRUZ
WM8737LGEFL
LTC1435CS#PBF
LTC1435ACS#TRPBF
LTC3879EMSE#PBF
LTC3871ILXE#PBF
LTC3872ETS8#TRPBF
KNX6165A
KNX4760A
KNX4360A
KNX7650A
KNX4850A
KIA5N50H
KNX6140A
KNX4540A
KNX2710A
KNX2810A
KNX6610A
KNX3208A
KNC2208A
KNX2708A
KNX3206A
KNX3706A
KNX3103A
KNX3203B
KNX3303A
LTC4364CS-2#PBF
LTC4364IMS-1#PBF
LTC4364CDE-2#TRPBF
LTC4365CTS8#TRPBF
LTC4365ITS8#TRPBF
WST2026
WST3032
WST3052
WST6006
WST2005
WST6004
WST6002
WST6008
WST6003
WST6005
WST2004
WST2002
WST3426
WST3424
WST2300
WST2304
WST3400S
WST2N7002
WST2N7002K
WST2N7002A
LT3573IMSE#PBF
LT1054CS8#TRPBF
B3226
LTC3216EDE#PBF
LT3799EMSE#TRPBF
LT3799IMSE#TRPBF
LT1751EMSE-3.3#TRPBF
LTC3604IUD#PBF
LTC3607EMSE#PBF
LTC3607IMSE#PBF
LTC3605AEUF#PBF
LTC3600EMSE#PBF
LT3511EMS#PBF
LT3042EMSE#TRPBF
LT3083EQ#PBF
LT3083IDF#PBF
LT3042EMSE#PBF
LT3045EMSE#PBF
LT3045EDD#TRPBF
LT3045IMSE#TRPBF
LT3042IMSE#TRPBF
LT3010HMS8E-5#PBF
LT3083IQ#PBF
LT3083EFE#PBF
LT3055EMSE#PBF
LT3022IMSE-1.5#PBF
LTC2249IUH#PBF
LTC2241IUP-10#PBF
LTC3612IFE#PBF
WSF90P03
WSF40P04
WSF30P04
WSF15P06
WSF30P06
WSF45P06
WSF15P10
WSF50P10
WSF45P10
WSF7P20
WSF3012
WSF3013
WSF4012
WSF6012
WSF4022
LTC3857IGN-1#PBF
HMC606LC5
LT3791EFE-1#PBF
LT3791IFE-1#PBF
LT3791EFE-1#TRPBF
LT3752IFE-1#PBF
XC5VSX95T-1FF1136I
SXBP-150+
LTC2282IUP#PBF
LTC2282CUP#PBF
LTC2287IUP#PBF
LTC2288IUP#PBF
LT8616EFE#PBF
LT8616IFE#PBF
LT1999CS8-20#PBF
XC5VLX30T-1FFG665C
LT2940CMS#PBF
LT2932CF#PBF
LT2932HF#PBF
LT2932IF#PBF
LTC2054CS5#TRPBF
LTC2051IMS8#TRPBF
LTC4010IFE#PBF
LTC4013IUFD#PBF
LTC4012IUF-2#PBF
LT8609AEMSE#PBF
LT8609EMSE#TRPBF
LTC2145IUP-14#PBF
LTC2140IUP-12#PBF
LTC2140CUP-12#PBF
LTC2141IUP-12#PBF
LTC2145CUP-14#PBF
LTC2141IUP-14#PBF
LTC2140IUP-14
LTC2143IUP-12#PBF
LTC5800IWR-IPRB#PBF
LTC3245IMSE#TRPBF
LTC3245EMSE#TRPBF
WST02N10B
WST2333
WST2337A
WST2337
WST3427
WST3423
WST2301
WST2303S
WST2305
WST2335
WST3417
WST3415S
WST6225
WST3403
WST2314
WST2316A
LTC4271IUF#PBF
LTC4270BIUKG#TRPBF
LTC4303IMS8#PBF
LTC4307CMS8#TRPBF
LTC1421CG#TR
AS380
LTC1144CS8#PBF
LTC1148HVCS-5#TR
LT3579EFE-1#PBF
LT3579IUFD-1#PBF
LTC6268IS8#PBF
LTC6244CMS8#PBF
LTC6244IMS8#PBF
LTC6811HG-1#PBF
LTC6804IG-1#PBF
LTC6811IG-1#PBF
LTC6911CMS-1#TRPBF
LTC3607EUD#PBF
LT3083EQ#TRPBF
LT3083IQ#TRPBF
LTC3855EUH#PBF
LTC3858EGN-1#PBF
LT8312IMS#PBF
LTM4650IY#PBF
LTM4651IY#PBF
LTM4650EY#PBF
LTM4650AEY#PBF
LTM4650AIY#PBF
LTM4650IY-1A#PBF
LTC1871EMS#TRPBF
LTC1871IMS-7#TRPBF
LTC1871IMS#TRPBF
LTC2978IUP#PBF
LTC2978CUP#PBF
LTC2975IUP#PBF
LTC2461CMS#PBF
LTC2460IMS#PBF
LTC2270IUP#PBF
LTC2273CUJ#PBF
LTC2273IUJ#PBF
LTC2270CUP#PBF
LT1440CS8#TR
LTC4020EUHF#TRPBF
LTC4020IUHF#TRPBF
LTC3779IFE#PBF
LTC3775EMSE#TRPBF
LTC3775IMSE#TRPBF
LTC5507ES6#PBF
LT3088IM#PBF
DEI0429-WMS
EV-ADF4355SD1Z
YSF-122+
SN74LVC244ADWR
LTC2656IFE-H16
LTC2656BCFE-H16#PBF
LTC2656BCFE-L16#PBF
LTC2654BIGN-H16#PBF
LTC2656BIFE-L16#PBF
LTC2656BIFE-H16#PBF
LTC2654BCGN-H16#PBF
LT8570EMS8E#PBF
PTH08T250WAD
PTH08T210WAD
LT3575IFE#PBF
LT3575EFE#PBF
LTC3524LEDC#PBF
LTC3522EUD#TRPBF
LTC3525ESC6-3.3#TRPBF
WST2316
WST3414
WST2306
WST3416
WST2318
WST2088
WST3408
WST3400A
WST3406
WST3406A
WST3400
WST4040
WST6066A
WST6066
WST02N10
WST05N10
WST05N10L
WST03N10B
WST02N20B
WST2303
WST2315
WST3415
WST3325
WST2339
WST3401A
WST3409
WST3401
WST3407
WST4045
WST4041
WST03P06
WSE3088
WSE3098
WSE9968
WSE9968A
WSE3099
WSG03N10
WSG02N20
LT3029EMSE#TRPBF
LT3754EUH#PBF
LTC1966CMS8#PBF
LTC1968IMS8#TRPBF
LTC1968CMS8#TRPBF
PMA4-33GLN+
YSF-2151+
LTC6078ACMS8#PBF
LTC4000EGN#PBF
LTC4002EDD-4.2#PBF
ZABT-2R15G+
LT3756EGN#PBF
LT3757IDD#PBF
LT3757EMSE#TRPBF
LT3759IMSE#TRPBF
LTM8032EY#PBF
LTM8033IY#PBF
LTM8032EV#PBF
LTM8032IY#PBF
LTM8033IV#PBF
LTM8033MPY#PBF
LTM8054EY#PBF
LTM8054IY#PBF
LTM8052IY#PBF
LTM8052IV#PBF
LTM8056IY#PBF
LTM8055EY#PBF
LTM8058IY#PBF
LTM8055IY#PBF
LTM8055MPY#PBF
LTC3499BEDD#PBF
ADRF5021BCCZN
MBDC-13-63HP
GM8905C
GM7122
ETA3000S2G
AR8035-AL1A-R
FUSB302BMPX
SGM8905YPMS10G/T
ET6226M
IT6251FN
RTL8201F-VB-CG
RTL8211F-CG
TPF605A-VR
INK1102S
RDA5815M
NCS8803
ET4933
LT8619B
NCS8801S
IT6563
ALC4050-VA1
BFP196
BFP196WH6327
DIO2133CT144
GM8906C
A4003C
MP1470GJ-Z
IT6564
PS8801QFN40GTR-A0
GM8185SF-BD
SAA7160ETR
H7019PFNL
S3202B
G5673RE1U
INT6000A1G
CY25819SXC
ACS730KLC-40AB-T
H5TC4G63EFR-RDA
WST3034
WST6045
WST02N20
WST8205
WST8205A
WST2066
WST3392
WST3013
WST2035
WST3035
WST05P06
WST2011
WST2033
WST2078
WST3078
WSP8205
WSP8810A
WSP2088
WSP8810
WSP8814
WSD2018DN22
WSD2054DN22
WSD1216DN22
WSD8823DN22
WSD4018DN22
WSD2065DN22
WSD2068DN23
BU16028KV
MINI51ZAN
PS8750BQFN52GTR-A2
MS6308
PS121TQFN40GTR-A1
CY8C4245PVI-482
PIC18LF2410-1/SO
PSB8303W1.1
WSD2098DN23
WSD2067
WSD2010DN25
WSD2012DN25
WSD2050DN
WSD3070DN
WSD3028DN
WSD3030DN
WSD3050DN
WSD3060DN
WSD3066DN
WSD4032DN
WSD4038DN
WSD4046GDN
WSD4050DN
WSD4070DN
FT5346DQQ
PM25LV512
TUSB2046BVFG4
CY7C1354CV-200AX
SI52131-A11AGM
RTL8316
P89CV51RD2FA, 512
AON7401
