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DMC3025LSD

DMC3025LSD Datasheet (PDF)

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Manufacturer: Diodes Incorporated

Product Category: MOSFET

RoHS: Details

Technology: Si

Installation style: SMD/SMT

Package/Case: SO-8

Transistor Polarity: N-Channel, P-Channel

Number of channels: 2 Channel

Vds-drain-source breakdown voltage: 30 V

Id-Continuous Drain Current: 8.5 A, 5.5 A

Rds On-Drain Source On Resistance: 20 mOhms, 45 mOhms

Vgs - Gate-Source Voltage: 20 V

Vgs th - gate-source threshold voltage: 1 V, 2 V

Qg-gate charge: 9.8 nC, 10.5 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power Dissipation: 1.5 W

Channel Mode: Enhancement

Qualification: AEC-Q101

Package: Cut Tape

Package: MouseReel

Package: Reel

Configuration: Dual

Trademark: Diodes Incorporated

Forward Transconductance - Min: 8 S, 5 S

Fall Time: 5.8 ns, 12.4 ns

Product Type: MOSFET

Rise Time: 4.2 ns, 4.9 ns

Factory Packing Quantity: 2500

Subcategory: MOSFETs

Typical turn-off delay time: 16.6 ns, 28.4 ns

Typical turn-on delay time: 3.9 ns, 6.8 ns

Unit weight: 8 mg

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