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2022-09-24 13:04:29
UM6J1NTN
Manufacturer: ROHM Semiconductor
Product Type: MOSFET
RoHS: ?Details
Technology: Si
Installation style: SMD/SMT
Package/Enclosure: SOT-363-6
Transistor Polarity: P-Channel
Number of channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - C continuous drain current: 200 mA
Rds On - Drain-Source Resistance: 900 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - gate-source threshold voltage: 2.5 V
Qg - Gate Charge: -
Minimum operating temperature: - 55 C
Maximum operating temperature: + 150 C
Pd - Power consumption: 150 mW
Channel Mode: Enhancement
Package: Cut Tape
Package: MouseReel
Package: Reel
Configuration: Dual
Series: UM6J1N
Transistor Type: 2 P-Channel
Brand: ROHM Semiconductor
Mutual Conductance - Min: 0.2 S
Fall Time: 40 ns
Product Type: MOSFET
Rise time: 5 ns
Original packaging quantity: 3000
Subcategory: MOSFETs
Standard off-delay time: 30 ns
Standard turn-on delay time: 8 ns
Part Number Alias: UM6J1N
Weight per piece: 7.500 mg