Field effect transistor N-channel MOSFET 7N65 Package: TO-220F Brand: XY Packing: 50/tube Voltage: 650V Current: 7A Gate-source voltage: ±30V Single pulse avalanche energy: 165MJ Avalanche current: 5.76A Repeated avalanche voltage: 100MJ Operating temperature and storage temperature range: -55~+150℃ feature quick switch 100% Avalanche Tested Improved dv/dt capa...
Read moreGeneral purpose diode MSE1PJ-M3/89A Package: DO-219AD Brand: VISHAY Packing: 4500/disk Forward voltage drop: 1.016V DC reverse withstand voltage: 600V Average rectified current: 1A Reverse current: 1UA LF maximum peak at 260°C typical application Universal, polarity protected and rail-to-rail, protecting consumer and automotive applications. Basic P/N-M3 - H...
Read moreContact: Su Yiting Contact number: 13682432195 QQ: 2851989182 Name: Schottky diode Model: VSSA310S-M3/61T Package: SMA (DO-214AC) Packing: 1800/disk Trench MOS Schottky: Low Power, High Efficiency Forward voltage drop: 800MV 3A DC reverse withstand voltage: 100V Average rectified current 1.7A Trench MOS Schottky; Low Power, High Efficiency, Low ...
Read moreContact: Su Yiting Contact: 13682432195 QQ: 2851989182 Name: Field Effect Transistor (MOSFEL) Military Technology Model: IRF540 Brand: XY Package: TO-220 Packing: 50/tube Parameters: N-Channel MOSFET Drain-source voltage: 100V Continuous leakage current: 30 A Pulse leakage current: 120 A Gate-source voltage: ±20 V Single pulse avalanche energy EAS...
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