Shenzhen Fuanou Technology Co., Ltd. 0755-82795635 Mr. Zhu QQ: 1005433625 AD590JH Features and Benefits Linear output current: 1uA/K Wide temperature range: -55°C to +150°C Probe Compatible Ceramic Sensor Packages Double-Terminal Devices: Voltage Input/Current Output Laser Trimmed to ±0.5°C Calibration Accuracy (AD590M) Excellent linearity: ±0.3°C f...
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Manufacturer Renesas Data List H8/3687 Standard package 160 packing tray Active Part Status Category Integrated Circuit IC Product Family Embedded - Microcontrollers Series H8? H8/300H Tiny Core processor H8/300H Kernel Specification 16-bit Speed 20MHz Connectivity I2C, SCI Peripheral PWM, WDT I/O count 45 Program storage capacity 56KB (56K x 8) P...
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Manufacturer Renesas Data List HIP4082 Standard package 2500 Packaging standard tape and reel Active Part Status Category Integrated Circuit IC Product Family PMIC - Gate Drivers Other namesHIP4082IBZT Drive configuration half bridge channel type independent Number of drives 4 Gate Type N-Channel MOSFET Voltage - Power supply 8.5V ~ 15V Logic Volt...
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Honeywell's history in China dates back to 1935. At that time, Honeywell opened its first dealership in Shanghai. When U.S. President Nixon visited China in 1973, at the invitation of the Chinese government, he recommended elite companies from ten fields to come to China to promote two-way exchanges between the two countries and promote China's modernization. Among them, the...
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EP1C6Q240C8N CY7C68013A-100AXC LT16411IS8 AM26LS31CDRG4 AM26LS32ACDR IS61WV102416BLL-10TLI IS61WV25616BLL-10TLI AD5724RBREZ ASSR-1611-301E LM6134AIMX SGTL5000XNAA3R2 91R1A-R22-B12 TPS61040DRVR 591D227X9016R2T20H WM8731LSEFL MP2235GJ CLT03-2Q3 DXW21BN7511SL GD32F103C8T6 GD25Q...
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Product Catalog SRAM Memory Memory Architecture (Format) SRAM Memory interface type Parallel Memory capacity 4Mb (256K x 16) Operating voltage 2.4V ~ 3.6V Memory type Volatile HMC1501-TR HMC1021Z-RC HMC1002-TR HMC1001-RC HHC2003 EP1C6Q240C8N CY7C68013A-100AXC LT16411IS8 AM26LS31CDRG4 AM26LS32ACDR IS61WV102416BLL...
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Product Catalog SRAM Memory Memory Architecture (Format) SRAM Memory interface type Parallel Memory capacity 16Mb (1M x 16) Operating voltage 2.4V ~ 3.6V Memory type Volatile Format - Memory: RAM Memory Type: SRAM - Asynchronous Storage capacity: 16M (1M x 16) Speed: 10ns Interface: Parallel Voltage - Power: 2.4 V ~ 3.6 V Operating temperature: -40°C...
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Catalog FLASH memory Memory architecture (format) FLASH Memory Interface TypeSPI - Dual/Quad I/O Memory capacity 16Mb (2M x 8) Operating voltage 2.7V ~ 3.6V Memory TypeNon-Volatile HMC1021Z-RC HMC1002-TR HMC1001-RC HHC2003 EP1C6Q240C8N CY7C68013A-100AXC LT16411IS8 AM26LS31CDRG4 AM26LS32ACDR IS61WV102416BLL-1...
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IS61WV25616BLL-10TLI AD5724RBREZ ASSR-1611-301E LM6134AIMX SGTL5000XNAA3R2 91R1A-R22-B12 TPS61040DRVR 591D227X9016R2T20H WM8731LSEFL MP2235GJ CLT03-2Q3 DXW21BN7511SL GD32F103C8T6 GD25Q32CSIG FBNL72A41K3BAAWP-AF EM78P156ELMJ-G OP07CDR UC3843BD1013TR ADG5409BRUZ CY8C4014S...
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